512-Mb prom with a three-dimensional array of diode/antifuse memory cells

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 11, 2003, Pages 1920-1928

  Johnson, Mark ^a   Al Shamma, Ali ^a   Bosch, Derek ^a   Crowley, Matthew ^a   Farmwald, Michael ^a   Fasoli, Luca ^a   Ilkbahar, Alper ^a   Kleveland, Bendik ^a   Lee, Thomas ^a   Liu, Tz Yi ^a   Nguyen, Quang ^a   Scheuerlein, Roy ^a   So, Kenneth ^a   Thorp, Tyler ^a  

^a Matrix Semicoonductor   (United States)

Author keywords

3 D semiconductors; Antifuse; CMOS memory; Nonvolatile memory; One time programmable (OTP); PROM

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANODES; CATHODES; CELLULAR ARRAYS; CMOS INTEGRATED CIRCUITS; DIODES; NONVOLATILE STORAGE; POLYSILICON; SEMICONDUCTOR DEVICES; SUBSTRATES;

ANTIFUSE; CMOS MEMORY; ONE-TIME PROGRAMMABLE; THREE DIMENSIONAL SEMICONDUCTORS;

PROM;

EID: 10744227833     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.818147     Document Type: Article

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