A detailed study of the forming stage of an electrochemical resistive switching memory by KMC simulation

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 949-951

  Pan, Feng ^a   Yin, Shong ^a   Subramanian, Vivek ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electrochemical; filament; forming stage; kinetic Monte Carlo (KMC); resistive switching random access memory (RRAM)

Indexed keywords

ELECTROCHEMICAL; KINETIC MONTE CARLO; KINETIC MONTE CARLO (KMC); PHYSICAL PROCESS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; S-SYSTEMS; STAGE CHARACTERISTICS; VOLTAGE LEVELS;

MONTE CARLO METHODS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79959793374     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2143691     Document Type: Article

References (10)

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