Resistive switching in nanogap systems on SiO2 substrates

Small

Volumn 5, Issue 24, 2009, Pages 2910-2915

  Yao, Jun ^a   Zhong, Lin ^b   Zhang, Zengxing ^c   He, Tao ^c   Jin, Zhong ^c   Wheeler, Patrick J ^c   Natelson, Douglas ^b,c   Tour, James M ^b,c  

^a RICE UNIVERSITY   (United States)

^b Rice University   (United States)

^c RICE UNIVERSITY   (United States)

Author keywords

Carbon nanotubes; Nanogaps; Nonvolatile memory; Resistive switching; SiO 2

Indexed keywords

FAST SWITCHING; GAP REGIONS; INTERMEDIATE STATE; MATERIAL COMPOSITIONS; NANO SCALE; NANO-GAP; NANOGAPS; NON-VOLATILE MEMORIES; ON/OFF RATIO; OXIDE BREAKDOWN; OXIDE SUBSTRATES; RESISTIVE SWITCHING; VOLTAGE-CONTROLLED;

AMORPHOUS CARBON; CARBON NANOTUBES; NANOSYSTEMS; SILICON COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SUBSTRATES; SWITCHING; SWITCHING SYSTEMS;

MULTIWALLED CARBON NANOTUBES (MWCN);

NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; MATERIALS TESTING; MICROELECTRODE; NANOTECHNOLOGY; SIGNAL PROCESSING; ULTRASTRUCTURE;

ELECTRIC IMPEDANCE; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MICROELECTRODES; NANOSTRUCTURES; NANOTECHNOLOGY; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON DIOXIDE;

EID: 73849152140     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200901100     Document Type: Article

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