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Volumn 11, Issue 28, 2009, Pages 5974-5979

Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells

Author keywords

[No Author keywords available]

Indexed keywords


EID: 78650110313     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/b901026b     Document Type: Article
Times cited : (40)

References (24)
  • 24
    • 85033423697 scopus 로고    scopus 로고
    • JARA - Fundamentals of Future Information Technology
    • JARA - Fundamentals of Future Information Technology, Non-volatile memories - novel concepts and materials, see http://www.jara-excellence.de/cms/ upload/bilder/JARA-FIT/NVMem.pdf
    • Non-volatile Memories - Novel Concepts and Materials, See


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.