SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

Low voltage cycling of programmable metallization cell memory devices

(3) Kamalanathan, D a,b Akhavan, A c Kozicki, M N a,b

a ARIZONA STATE UNIVERSITY (United States)

b Adesto Technologies (United States)

c AZ 85281 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AT POWER SUPPLIES; LOW VOLTAGES; MEMORY TECHNOLOGY; NANO SCALE; NUMBER OF CYCLES; PROGRAM AND ERASE; PROGRAMMABLE METALLIZATION CELLS; RESISTANCE RATIO; RESISTANCE VALUES; SERIES RESISTANCES; SWITCHING SPEED;

GERMANIUM;

METALLIZING;

EID: 79956097494 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/22/25/254017 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.