SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 5, 2011, Pages 814-816

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(4) Bernard, Y a,b Renard, V T a Gonon, P b Jousseaume, V a

a CEA LETI (France)

b CNRS (France)

Author keywords

CBRAM; Conductive Bridging Memory; Non volatile; Solid electrolyte; Switching

Indexed keywords

BACK END OF LINES; CBRAM; CONDUCTIVE BRIDGING MEMORY; ELECTRICAL SWITCHING; INSULATING LAYERS; KINETIC BEHAVIOUR; METALLIC FILAMENTS; NON-VOLATILE; NON-VOLATILE MEMORIES; POST TREATMENT; RESISTIVE STATE; SWITCHING MECHANISM;

DISSOLUTION; SILICON COMPOUNDS; SOLID ELECTROLYTES; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 79952485074 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.06.041 Document Type: Conference Paper

Times cited : (70)

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