Simulation of multilevel switching in electrochemical metallization memory cells

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Menzel, Stephan ^a   Böttger, Ulrich ^a   Waser, Rainer ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COUNTER ELECTRODES; DIRECT TUNNELING; EXPERIMENTAL DATA; MEMORY CELL; METALLIC FILAMENTS; NON-POLAR; RESISTIVE SWITCHING; SIMULATION MODEL; SIMULATION STUDIES;

SWITCHING;

COMPUTER SIMULATION;

EID: 84855921198     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673239     Document Type: Article

References (25)

1. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). 10.1038/nature06932 (Pubitemid 351630336)
2. N. Derhacobian, S. C. Hollmer, N. Gilbert, and M. N. Kozicki, Proc. IEEE 98, 283 (2010). 10.1109/JPROC.2009.2035147
3. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
4. M. Aono and T. Hasegawa, Proc. IEEE 98, 2228 (2010). 10.1109/JPROC.2010. 2061830
5. T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, Nanotechnology 21, 425205 (2010). 10.1088/0957-4484/21/42/425205
6. R. Waser and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
7. W. Guan, S. Long, Q. Liu, M. Liu, and W. Wang, IEEE Electron Device Lett. 29, 434 (2008). 10.1109/LED.2008.919602 (Pubitemid 351676302)
8. C. Schindler, S. C. P. Thermadam, R. Waser, and M. N. Kozicki, IEEE Trans. Electron Devices 54, 2762 (2007). 10.1109/TED.2007.904402 (Pubitemid 47541876)
9. S. Menzel, B. Klopstra, C. Kuegeler, U. Boettger, G. Staikov, and R. Waser, Mater. Res. Soc. Symp. Proc. 1160, 101 (2009). 10.1557/PROC-1160-H09-03
10. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Kozicki, IEEE Trans. Electron Devices 56, 1040 (2009). 10.1109/TED.2009.2016019
11. S. Yu and H.-S. Wong, IEEE Trans. Electron Devices 58, 1352 (2011). 10.1109/TED.2011.2116120
12. C. Schindler, G. Staikov, and R. Waser, Appl. Phys. Lett. 94, 072109 (2009). 10.1063/1.3077310
13. Y. Bernard, V. T. Renard, P. Gonon, and V. Jousseaume, Microelectron. Eng. 88, 814 (2011). 10.1016/j.mee.2010.06.041
14. C. Schindler, Resistive switching in electrochemical metallization memory cells (RWTH Aachen, Aachen, Germany, 2009).
15. E. Scheer, N. Agrait, J. Cuevas, A. Yeyati, B. Ludoph, A. Martin-Rodero, G. Bollinger, J. van Ruitenbeek, and C. Urbina, Nature 394, 154 (1998). 10.1038/28112 (Pubitemid 28325962)
16. D. B. Strukov and R. S. Williams, Appl. Phys. A: Mater. Sci. Process. 102, 851 (2011). 10.1007/s00339-011-6269-4
17. D. Ielmini, F. Nardi, and C. Cagli, Nanotechnology 22, 254022 (2011). 10.1088/0957-4484/22/25/254022
18. C. Schindler, M. Meier, R. Waser, and M. N. Kozicki, in Proceedings of the Non-Volatile Memory Techonology Symposium (IEEE, New York, 2007), p. 82.
19. J. Xiang, B. Liu, B. Liu, B. Ren, and Z. Tian, Electrochem. Commun. 8, 577 (2006). 10.1016/j.elecom.2006.02.002
20. C. H. Hamann, A. Hamnett, and W. Vielstich, Electrochemistry (Wiley-VCH, Weinheim, 2007).
21. M. Faraday, Philos. Trans. R. Soc. London 124, 77 (1834). 10.1098/rstl.1834.0008
22. N. F. Mott and R. W. Gurney, Electronic processes in ionic crystals (Oxford University Press, London, 1948).
23. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963). 10.1063/1.1702682
24. L. O. Chua, Appl. Phys. A: Mater. Sci. Process. 102, 765 (2011). 10.1007/s00339-011-6264-9
25. See supplementary material at http://dx.doi.org/10.1063/1.3673239 E-JAPIAU-111-036201 for Fig. S1.