One-dimensional model of the programming kinetics of conductive-bridge memory cells

Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

  Jameson, John R ^a   Gilbert, Nad ^a   Koushan, Foroozan ^a   Saenz, Juan ^a   Wang, Janet ^a   Hollmer, Shane ^a   Kozicki, Michael N ^a  

^a Adesto Technologies Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODE SURFACES; MATERIAL PARAMETER; MEMORY CELL; METALLIC FILAMENTS; ONE-DIMENSIONAL MODEL; QUANTIZED CONDUCTANCE;

ELECTRIC FIELDS; GROWTH KINETICS; QUANTUM ELECTRONICS;

SEMICONDUCTOR STORAGE;

EID: 84857343014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3623485     Document Type: Article

References (10)

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