Proton mobility in SiO 2 thin films and impact of hydrogen and humidity on the resistive switching effect

Materials Research Society Symposium Proceedings

Volumn 1330, Issue , 2011, Pages 1-6

  Tappertzhofen, Stefan ^a,b   Hempel, Marek ^a,b   Valov, Ilia ^a,b,c   Waser, Rainer ^a,b,c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b Julich Aachen Research Alliance JARA   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CMOS COMPATIBLE; CURRENT PULSE; CURRENT-VOLTAGE MEASUREMENTS; DEFECT MODEL; ELECTROCHEMICAL METALLIZATION (ECM); METAL ION TRANSPORT; METALLIC FILAMENTS; NONVOLATILE MEMORY DEVICES; PROTON MOBILITY; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING MECHANISM; TIME OF FLIGHT; TOF SIMS;

HYDROGEN; METAL IONS; PROTONS; SECONDARY ION MASS SPECTROMETRY; SILICA; THIN FILMS;

SWITCHING SYSTEMS;

EID: 84860172495     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.1198     Document Type: Conference Paper

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