On the stochastic nature of resistive switching in Cu doped Ge 0.3Se0.7 based memory devices

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Soni, R ^a   Meuffels, P ^a   Staikov, G ^a   Weng, R ^a   Kgeler, C ^b   Petraru, A ^c   Hambe, M ^c   Waser, R ^a   Kohlstedt, H ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

^c UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC PROPERTIES; BREAKDOWN ANALYSIS; CONDUCTING FILAMENT; CONSTANT VOLTAGE STRESS; CRITICAL NUCLEI; ELEVATED TEMPERATURE; NON-VOLATILE MEMORIES; NUCLEATION THEORY; ON-RESISTANCE; PHASE FORMATIONS; RECENT PROGRESS; RESISTIVE SWITCHING; SMALL CLUSTERS; STOCHASTIC BEHAVIOR; STOCHASTIC NATURE; SWITCHING PROCESS;

ELECTROCHEMICAL PROPERTIES; GERMANIUM; LOGIC DEVICES; NUCLEATION; RANDOM ACCESS STORAGE; SOLID ELECTROLYTES; STOCHASTIC SYSTEMS; SWITCHING SYSTEMS;

SWITCHING;

EID: 80052924441     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3631013     Document Type: Conference Paper

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