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Applied Physics Letters

Volumn 99, Issue 20, 2011, Pages

Redox processes in silicon dioxide thin films using copper microelectrodes

(4) Tappertzhofen, S a,b Menzel, S a,b Valov, I a,b Waser, R a,b

a RWTH AACHEN UNIVERSITY (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER MICROELECTRODES; CU IONS; ELECTROCHEMICAL CHARACTERISTICS; NONVOLATILE MEMORY DEVICES; REDOX PROCESS; RESISTIVE SWITCHING; SUBSEQUENT REDUCTION;

CYCLIC VOLTAMMETRY; HEAVY IONS; INTERFACES (MATERIALS); MICROELECTRODES; NONVOLATILE STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON OXIDES; THIN FILMS;

ANODIC OXIDATION;

EID: 81855187164 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3662013 Document Type: Article

Times cited : (75)

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