Electrochemical metallization memories - Fundamentals, applications, prospects

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Valov, Ilia ^a   Waser, Rainer ^a,b   Jameson, John R ^c   Kozicki, Michael N ^c,d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c Adesto Technologies   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNS; DATA STORAGE; DEVICE CHARACTERISTICS; ELECTROCRYSTALLIZATION; ELECTRODE REACTIONS; ELECTROLYTE MATERIAL; ELECTRON TRANSFER; HISTORICAL DEVELOPMENT; MAJOR FACTORS; MATERIAL COMBINATION; MEMORY CELL; MEMORY DEVICE; METALLIZATIONS; MULTI-BITS; NANO-SIZED; PATH PROBLEMS; POSSIBLE SOLUTIONS; SLOW DIFFUSION; SPACE CHARGE LAYERS; STRONG ELECTRIC FIELDS; SWITCHING MECHANISM; SWITCHING SPEED; THERMODYNAMICS AND KINETICS; TRANSPORT KINETIC;

ELECTRIC FIELDS; ELECTROLYTIC CELLS; METALLIZING; REACTION KINETICS; THERMODYNAMICS;

CELLS;

EID: 79956159040     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254003     Document Type: Review

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