Study of multilevel programming in Programmable Metallization Cell (PMC) memory

IEEE Transactions on Electron Devices

Volumn 56, Issue 5, 2009, Pages 1040-1047

  Russo, Ugo ^a,b   Kamalanathan, Deepak ^b   Ielmini, Daniele ^a   Lacaita, Andrea L ^a   Kozicki, Micheal N ^b  

^a POLITECNICO DI MILANO   (Italy)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electrical switching; Modeling; Multilevel storage; Non volatile memory; Solid electrolyte

Indexed keywords

CONDUCTIVE FILAMENTS; ELECTRICAL DATA; ELECTRICAL SWITCHING; ELECTROCHEMICAL DEPOSITION; EXPERIMENTAL DATA; HIGH RESISTANCE; ION MIGRATION; LOW-RESISTANCE STATE; MODELING; MULTI-LEVEL; MULTILEVEL PROGRAMMING; MULTILEVEL STORAGE; NON-VOLATILE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY; PHYSICAL MODEL; PROGRAMMABLE METALLIZATION CELLS; PULSE MODES; REASONABLE ACCURACY; RESISTIVE SWITCHING MEMORIES; SEMI-ANALYTICAL; VARIABLE LOADS;

DISSOLUTION; ELECTROLYSIS; METALLIZING; REDUCTION; SOLID ELECTROLYTES;

GROWTH KINETICS;

EID: 67349281548     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2016019     Document Type: Article

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