Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices

Thin Solid Films

Volumn 518, Issue 12, 2010, Pages 3293-3298

  Thermadam, S Puthen ^a   Bhagat, S K ^a   Alford, T L ^a   Sakaguchi, Y ^b   Kozicki, M N ^a   Mitkova, M ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Boise State University   (United States)

Author keywords

compositional characteristics; copper diffusion; copper doped silicon dioxide; nanoionic devices; non volatile memory; silicon dioxide based memory

Indexed keywords

COMPOSITIONAL CHARACTERISTICS; COPPER DIFFUSION; DOPED SILICON; NON-VOLATILE MEMORIES; SILICON DIOXIDE;

DIFFRACTION; DIFFUSION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON OXIDES; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION;

COPPER;

EID: 77649204060     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.021     Document Type: Article

References (19)

1. Kozicki M.N., Park M., and Mitkova M. IEEE Trans. Nanotechnol. 4 (2005) 331
2. Kozicki M.N., Mitkova M., Park M., Balakrishnan M., and Gopalan C. Superlattices Microstruct. 34 (2004) 459
3. Gopalan C., Kozicki M.N., Bhagat S., Powelait C., Alford T., and Mitkova M. J. Non-Cryst. Solids 353 (2007) 1844
4. M. Balakrishnan, S. C. P. Thermadan, M. Mitkova M. N. Kozicki IEEE Proceedings 2006 Non-volatile Memory Technology Symposium, 5-8 November 2006 San Mateo, California, USA p. 104.
5. Schindler C., Puthen Thermadam S.C., Waser R., and Kozicki M.N. IEEE Trans. Electron Devices 54 (2007) 2762
6. Johannesen B., Kluth P., Glover C.J., Foran G.J., and Ridgway M.C. Nucl. Instrum. Phys. Res. B 242 (2006) 113
7. Pan J., Wang H., Takeda Y., Umeda N., Kono K., Amekura H., and Kishimoto N. Nucl. Instrum. Phys. Res. B 257 (2007) 585
8. Doolittle L.R. Nucl. Instrum. Methods Res. B 9 (1985) 344
9. Hemley R.J., Mao H.K., Bell P.M., and Mysen B.O. Phys. Rev. Lett. 57 (1986) 747
10. Gong Y.S., Lee C., and Yang C.K. J. Appl. Phys. 77 (1995) 5422
11. Xu J.F., Ji W., Shen Z.X., Li W.S., Tang S.H., Ye X.R., Jia D.Z., and Xin X.Q. J. Raman Spectrosc. 30 (1999) 413
12. McBrayer J.D., Swanson R.M., and Sigmon T.W. J. Electrochem. Soc. 133 (1986) 1242
13. Lee S.-W., Kim Y.-H., Kim K.-S., Hong B.-S., and Lee B.-Y. J. Korean Phys. Soc. 48 (2006) 1548
14. Sun Y.-M., Lee S.Y., Lemonds A., Lozano J., Zhou J.-P., Ekerdt J.G., White J.M., and Imesh I. Surf. Interface Anal. 32 (2001) 79
15. Kopylov V.B., Aleksandrov K.A., and Sergeev E.V. Russ. J. Gen. Chem. 78 (2008) 868
16. Dallaporta H., Liehr M., and Lewis J.E. Phys. Rev. B 41 (1990) 5075
17. Cao B., Li G.-P., Chen X.-M., Cho S.-J., and Kim H. Chin. Phys. Lett. 25 (2008) 1400
18. Fisher I., and Eizenberg M. Thin Solid Films 516 (2008) 4111
19. Shacham-Diamand Y., Dedhia A., Hoffstetter D., and Oldham W.G. J. Electrochem. Soc. 140 (1993) 2427