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Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

Resistance switching of Cu/ SiO2 memory cells studied under voltage and current-driven modes

(3) Bernard, Y a,b Gonon, P a Jousseaume, V b

a Joseph Fourier University (France)

b CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT STRESS; CONSTANT VOLTAGE; CURRENT-DRIVEN; DEVICE CAPACITANCE; FOWLER-NORDHEIM TUNNELING; INDUCED NUCLEATION; LINEAR VOLTAGE RAMP; MEMORY CELL; RANDOM ACCESS MEMORIES; RESISTANCE SWITCHING; SWITCHING KINETICS; SWITCHING TIME; TIME-DEPENDENT; UNDER VOLTAGE; V CYCLE;

RANDOM ACCESS STORAGE; SILICON COMPOUNDS;

SWITCHING;

EID: 77953006770 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428779 Document Type: Article

Times cited : (41)

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