Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches

Advanced Functional Materials

Volumn 22, Issue 1, 2012, Pages 70-77

  Tsuruoka, Tohru ^a,b   Terabe, Kazuya ^a   Hasegawa, Tsuyoshi ^a,b   Valov, Ilia ^c,d   Waser, Rainer ^c,d   Aono, Masakazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

electrochemical metallization cell; gapless type atomic switches; moisture; nanoionics; oxides

Indexed keywords

AMBIENT AIR; AMBIENT MOISTURE; AMBIENT WATERS; ATOMIC SWITCHES; CHEMICAL OXIDATION; CU IONS; CURRENT-VOLTAGE MEASUREMENTS; GAPLESS-TYPE ATOMIC SWITCHES; HIGH SCALABILITIES; HYDROGEN BOND NETWORKS; LOW-POWER CONSUMPTION; METAL FILAMENTS; METAL-OXIDE; MIGRATION PROCESS; MOISTURE ABSORPTION; NANOIONICS; OPERATION MECHANISM; OPERATION VOLTAGE; OXIDE LAYER; OXIDE MATERIALS; RESIDUAL WATERS; RESISTIVE SWITCHING MEMORIES; SIMPLE METALS; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS;

ATOMS; CELLS; CHEMICAL STABILITY; GRAIN BOUNDARIES; HYDROGEN; IMPACT IONIZATION; IONIZATION OF LIQUIDS; METALLIZING; MOISTURE; OXIDES; SWITCHING; WATER ABSORPTION; WATER VAPOR;

SEMICONDUCTOR DEVICES;

EID: 84855313445     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201101846     Document Type: Article

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