Effect of nitrogen content in amorphous SiCxNyOz thin films deposited by low temperature reactive magnetron co-sputtering technique

Surface and Coatings Technology

Volumn 206, Issue 7, 2011, Pages 1787-1795

  Medeiros, H S ^a   Pessoa, R S ^a,b   Sagas J C ^a   Fraga, M A ^a,c   Santos, L V ^a,b   Maciel, H S ^a,b   Massi, M ^a   Sobrinho, A S da Silva ^a   da Costa, M E H Maia ^d  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b INSTITUTO DE PESQUISA E DESENVOLVIMENTO   (Brazil)

^c INSTITUTO DE ESTUDOS AVANÇADOS   (Brazil)

^d PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

Amorphous thin film; Chemistry analysis; Co sputtering; Film resistivity; Silicon oxycarbonitride

Indexed keywords

AMORPHOUS PHASIS; AMORPHOUS STRUCTURES; AMORPHOUS THIN FILMS; C-C BONDS; CARBON CONTENT; COSPUTTERING; DEPOSITION PROCESS; ELECTRICAL RESISTIVITY; FILM COMPOSITION; FILM RESISTIVITY; FILM STRUCTURE; FILM SURFACES; FOUR-POINT PROBE METHOD; GASPHASE; GRAPHITE TARGET; LOW TEMPERATURES; NITROGEN CONTENT; NITROGEN INCORPORATION; REACTIVE MAGNETRON CO-SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROMETRY; SI SUBSTRATES; SILICON TARGETS; SPUTTERING RATE; XPS ANALYSIS; XRD ANALYSIS;

AMORPHOUS SILICON; BOND STRENGTH (CHEMICAL); CARBON FILMS; ELECTRIC CONDUCTIVITY; GRAPHITE; MAGNETRONS; NITROGEN; NITROGEN PLASMA; OXYGEN; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON NITRIDE; SPUTTER DEPOSITION; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 82755197107     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.09.062     Document Type: Article

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