Optical, electrical and structural properties of amorphous SiCN:H films prepared by rf glow-discharge decomposition

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 468-471

  Nakaaki, I ^a   Saito, N ^b  

^a Fuji Industrial Research Institute of Shizuoka Prefecture   (Japan)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; DECOMPOSITION; DOPING (ADDITIVES); GLOW DISCHARGES; HELIUM; METHANE; NITROGEN; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; SILANES; SILICON ALLOYS;

RADIO FREQUENCY GLOW DISCHARGE DECOMPOSITION;

AMORPHOUS FILMS;

EID: 17344379722     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00728-5     Document Type: Article

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