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Volumn 193, Issue 1-4, 2002, Pages 204-209
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Thermochemical process occurring in PLD-derived SiC films during vacuum annealing
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Author keywords
PLD; SiC; Thin films; XPS
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
PULSED LASER DEPOSITION;
SILICON CARBIDE;
THERMOMECHANICAL TREATMENT;
THIN FILMS;
VACUUM;
X RAY PHOTOELECTRON SPECTROSCOPY;
VACUUM ANNEALING;
SURFACE TREATMENT;
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EID: 0037024495
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(02)00500-7 Document Type: Article |
Times cited : (6)
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References (27)
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