Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays

Vacuum

Volumn 72, Issue 1, 2003, Pages 91-95

  Changshi, Liu ^a  

^a SHAOXING UNIVERSITY   (China)

Author keywords

Bias field; Dosage; XPS

Indexed keywords

GAMMA RAYS; INTERFACES (MATERIALS); IRRADIATION; SILICA; SILICON; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

DOUBLE INTERFACES SYSTEM;

SILICON NITRIDE;

EID: 0043032819     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(03)00106-4     Document Type: Article

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