-
1
-
-
0037439576
-
-
0021-8979, 10.1063/1.1530722
-
Y. W. Koh, K. P. Loh, L. Rong, A. T. S. Wee, L. Huang, and J. Sudijono, J. Appl. Phys. 0021-8979 93, 1241 (2003). 10.1063/1.1530722
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 1241
-
-
Koh, Y.W.1
Loh, K.P.2
Rong, L.3
Wee, A.T.S.4
Huang, L.5
Sudijono, J.6
-
2
-
-
0000270160
-
-
0021-4922, 10.1143/JJAP.40.2663
-
S. G. Lee, Y. J. Kim, S. P. Lee, H. Y. Oh, and S. J. Lee, Jpn. J. Appl. Phys. 0021-4922 40, 2663 (2001). 10.1143/JJAP.40.2663
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, pp. 2663
-
-
Lee, S.G.1
Kim, Y.J.2
Lee, S.P.3
Oh, H.Y.4
Lee, S.J.5
-
3
-
-
0842333179
-
-
0013-4651, 10.1149/1.1630808
-
A. S. Lee, N. Rajagopalan, M. Le, B. H. Kim, and H. M'Saad, J. Electrochem. Soc. 0013-4651 151, F7 (2004). 10.1149/1.1630808
-
(2004)
J. Electrochem. Soc.
, vol.151
, pp. 7
-
-
Lee, A.S.1
Rajagopalan, N.2
Le, M.3
Kim, B.H.4
M'Saad, H.5
-
4
-
-
0037502858
-
-
0013-4651, 10.1149/1.1562600
-
T. Ishimaru, Y. Shioya, H. Ikakura, M. Nozawa, S. Ohgawara, T. Ohdaira, R. Suzuki, and K. Maeda, J. Electrochem. Soc. 0013-4651 150, F83 (2003). 10.1149/1.1562600
-
(2003)
J. Electrochem. Soc.
, vol.150
, pp. 83
-
-
Ishimaru, T.1
Shioya, Y.2
Ikakura, H.3
Nozawa, M.4
Ohgawara, S.5
Ohdaira, T.6
Suzuki, R.7
Maeda, K.8
-
5
-
-
0033280897
-
-
Proceedings of 1999 IEEE VLSI, (unpublished).
-
M. Tanaka, S. Saida, T. Iijima, and Y. Tsunashima, Proceedings of 1999 IEEE VLSI, 1999, p. 47 (unpublished).
-
(1999)
, pp. 47
-
-
Tanaka, M.1
Saida, S.2
Iijima, T.3
Tsunashima, Y.4
-
6
-
-
0036118153
-
Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering
-
DOI 10.1116/1.1431952
-
X. Peng, L. Song, J. Le, and X. Hu, J. Vac. Sci. Technol. B 1071-1023 20, 159 (2002). 10.1116/1.1431952 (Pubitemid 34228409)
-
(2002)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.20
, Issue.1
, pp. 159-163
-
-
Peng, X.1
Song, L.2
Le, J.3
Hu, X.4
-
7
-
-
77953006375
-
-
1071-1023, 10.1116/1.3425633
-
Y. L. Cheng, S. A. Chen, T. J. Chiu, B. J. Wei, J. Wu, and H. J. Chang, J. Vac. Sci. Technol. B 1071-1023 28, 573 (2010). 10.1116/1.3425633
-
(2010)
J. Vac. Sci. Technol. B
, vol.28
, pp. 573
-
-
Cheng, Y.L.1
Chen, S.A.2
Chiu, T.J.3
Wei, B.J.4
Wu, J.5
Chang, H.J.6
-
8
-
-
31144433279
-
Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow- k interconnects
-
DOI 10.1116/1.2006129
-
Z. Chen, K. Prasad, N. Jiang, L. J. Tang, P. W. Lu, and C. Y. Li, J. Vac. Sci. Technol. B 1071-1023 23, 1866 (2005). 10.1116/1.2006129 (Pubitemid 43127143)
-
(2005)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.23
, Issue.5
, pp. 1866-1872
-
-
Chen, Z.1
Prasad, K.2
Jiang, N.3
Tang, L.J.4
Lu, P.W.5
Li, C.Y.6
-
9
-
-
0036757851
-
-
0021-4922, 10.1143/JJAP.41.5734
-
Y. W. Li and C. F. Chen, Jpn. J. Appl. Phys. 0021-4922 41, 5734 (2002). 10.1143/JJAP.41.5734
-
(2002)
Jpn. J. Appl. Phys.
, vol.41
, pp. 5734
-
-
Li, Y.W.1
Chen, C.F.2
-
10
-
-
0141494576
-
-
0021-4922, 10.1143/JJAP.42.4489
-
C. C. Chiang, Z. C. Wu, W. H. Wu, M. C. Chen, C. C. Ko, H. P. Chen, S. M. Jang, C. H. Yu, and M. S. Liang, Jpn. J. Appl. Phys. 0021-4922 42, 4489 (2003). 10.1143/JJAP.42.4489
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, pp. 4489
-
-
Chiang, C.C.1
Wu, Z.C.2
Wu, W.H.3
Chen, M.C.4
Ko, C.C.5
Chen, H.P.6
Jang, S.M.7
Yu, C.H.8
Liang, M.S.9
-
11
-
-
0036857854
-
Properties of low-k SiCOH films prepared by plasma-enhanced chemical vapor deposition using trimethylsilane
-
DOI 10.1016/S0026-2692(02)00075-7, PII S0026269202000757
-
B. Narayanan, R. Kumar, and P. D. Foo, J. Microelectro. 33, 971 (2002). 10.1016/S0026-2692(02)00075-7 0002-7820 (Pubitemid 35411918)
-
(2002)
Microelectronics Journal
, vol.33
, Issue.11
, pp. 971-974
-
-
Narayanan, B.1
Kumar, R.2
Foo, P.D.3
-
12
-
-
30944460713
-
Comparison of characteristics and integration of copper diffusion-barrier dielectrics
-
DOI 10.1016/j.tsf.2005.07.059, PII S0040609005009193, Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
-
T. C. Wang, Y. L. Cheng, Y. L. Wang, T. E. Hsieh, G. J. Hwang, and C. F. Chen, Thin Solid Films 0040-6090 498, 36 (2006). 10.1016/j.tsf.2005.07.059 (Pubitemid 43113121)
-
(2006)
Thin Solid Films
, vol.498
, Issue.1-2
, pp. 36-42
-
-
Wang, T.C.1
Cheng, Y.L.2
Wang, Y.L.3
Hsieh, T.E.4
Hwang, G.J.5
Chen, C.F.6
-
13
-
-
2142657945
-
-
0021-4922, 10.1143/JJAP.43.750
-
Y. Shioya, K. Maeda, T. Ishimaru, H. Ikakura, T. Masubuchi, T. Ohdaira, and R. Suzuki, Jpn. J. Appl. Phys. 0021-4922 43, 750 (2004). 10.1143/JJAP.43.750
-
(2004)
Jpn. J. Appl. Phys.
, vol.43
, pp. 750
-
-
Shioya, Y.1
Maeda, K.2
Ishimaru, T.3
Ikakura, H.4
Masubuchi, T.5
Ohdaira, T.6
Suzuki, R.7
-
14
-
-
0012649856
-
Heat and Moisture Resistance of Siloxane-Based Low-Dielectric-Constant Materials
-
DOI 10.1149/1.1386916
-
T. Furusawa, D. Ryuzaki, R. Yoneyama, Y. Homma, and K. Hinode, J. Electrochem. Soc. 0013-4651 148, F175 (2001). 10.1149/1.1386916 (Pubitemid 33693714)
-
(2001)
Journal of the Electrochemical Society
, vol.148
, Issue.9
-
-
Furusawa, T.1
Ryuzaki, D.2
Yoneyama, R.3
Homma, Y.4
Hinode, K.5
-
15
-
-
33947100379
-
Influences of atomic hydrogen on porous low-k dielectric for 45-nm node
-
DOI 10.1016/j.tsf.2006.10.080, PII S0040609006012314
-
K. Tomioka, E. Soda, N. Kobayashi, M. Takata, S. Uda, K. Ogushi, Y. Yuba, and Y. Akasaka, Thin Solid Films 0040-6090 515, 5031 (2007). 10.1016/j.tsf.2006.10.080 (Pubitemid 46399865)
-
(2007)
Thin Solid Films
, vol.515
, Issue.12
, pp. 5031-5034
-
-
Tomioka, K.1
Soda, E.2
Kobayashi, N.3
Takata, M.4
Uda, S.5
Ogushi, K.6
Yuba, Y.7
Akasaka, Y.8
-
16
-
-
2342644129
-
-
1071-1023, 10.1116/1.1651111
-
K. Yonekura, S. Sakamori, K. Goto, M. Matsuura, N. Fuliwara, and M. Yoneda, J. Vac. Sci. Technol. B 1071-1023 22, 548 (2004). 10.1116/1.1651111
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, pp. 548
-
-
Yonekura, K.1
Sakamori, S.2
Goto, K.3
Matsuura, M.4
Fuliwara, N.5
Yoneda, M.6
-
17
-
-
23744506544
-
Damage of low-k and ultralow-k dielectrics from reductive plasma discharges used for photoresist removal
-
DOI 10.1149/1.1921848
-
D. L. Moore, R. J. Carter, H. Cui, P. Burke, S. Q. Gu, H. Peng, R. S. Valley, D. W. Gidley, C. Waldfried, and O. Escorcia, J. Electrochem. Soc. 0013-4651 152, G528 (2005). 10.1149/1.1921848 (Pubitemid 41119357)
-
(2005)
Journal of the Electrochemical Society
, vol.152
, Issue.7
-
-
Moore, D.L.1
Carter, R.J.2
Cui, H.3
Burke, P.4
Gu, S.Q.5
Peng, H.6
Valley, R.S.7
Gidley, D.W.8
Waldfried, C.9
Escorcia, O.10
-
18
-
-
33644896201
-
-
0040-6090, 10.1016/j.tsf.2005.09.175
-
E. Zschech, M. A. Meyer, S. G. Mhaisalkar, A. V. Vairagar, A. Krishnamoorthy, H. J. Engelmann, and V. Sukharev, Thin Solid Films 0040-6090 504, 279 (2006). 10.1016/j.tsf.2005.09.175
-
(2006)
Thin Solid Films
, vol.504
, pp. 279
-
-
Zschech, E.1
Meyer, M.A.2
Mhaisalkar, S.G.3
Vairagar, A.V.4
Krishnamoorthy, A.5
Engelmann, H.J.6
Sukharev, V.7
-
19
-
-
1842842332
-
-
0026-2714, 10.1016/j.microrel.2003.12.011
-
A. V. Vairagar, S. G. Mhaisalkar, and A. Krishnamoorthy, Microelectron. Reliab. 0026-2714 44, 747 (2004). 10.1016/j.microrel.2003.12.011
-
(2004)
Microelectron. Reliab.
, vol.44
, pp. 747
-
-
Vairagar, A.V.1
Mhaisalkar, S.G.2
Krishnamoorthy, A.3
-
20
-
-
85067728312
-
-
Proceedings of the 45th IEEE Annual International Reliability Physical Symposium, (unpublished).
-
Y. L. Cheng, B. L. Lin, S. Y. Lee, C. C. Chiu, and Kenneth Wu, Proceedings of the 45th IEEE Annual International Reliability Physical Symposium, 2008, p. 128 (unpublished).
-
(2008)
, pp. 128
-
-
Cheng, Y.L.1
Lin, B.L.2
Lee, S.Y.3
Chiu, C.C.4
Wu, K.5
-
21
-
-
33644921204
-
-
0040-6090, 10.1016/j.tsf.2005.09.064
-
W. Shao, Z. H. Gan, S. G. Mhaisalkar, Z. Chen, and H. Li, Thin Solid Films 0040-6090 504, 298 (2006). 10.1016/j.tsf.2005.09.064
-
(2006)
Thin Solid Films
, vol.504
, pp. 298
-
-
Shao, W.1
Gan, Z.H.2
Mhaisalkar, S.G.3
Chen, Z.4
Li, H.5
-
22
-
-
40549139161
-
Effects of surface cleaning on stressvoiding and electromigration of Cu-damascene interconnection
-
DOI 10.1109/TDMR.2007.912263, 4384326
-
J. -P. Wang, Y. -K. Su, and J. F. Chen, IEEE Trans. Device Mater. Reliab. 1530-4388 8, 210 (2008). 10.1109/TDMR.2007.912263 (Pubitemid 351356032)
-
(2008)
IEEE Transactions on Device and Materials Reliability
, vol.8
, Issue.1
, pp. 210-215
-
-
Wang, J.-P.1
Su, Y.-K.2
Chen, J.F.3
|