Growth of SiC on Si substrates with C2H4 and Si2H6

Applied Surface Science

Volumn 148, Issue 3, 1999, Pages 189-195

  Wang, Y S ^a   Li, J M ^a   Lin, L Y ^a   Zhang, F F ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; HYDROCARBONS; PHONONS; RAMAN SPECTROSCOPY; SILICON; SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; SURFACES; TWINNING;

DOUBLE DOMAIN SUPERSTRUCTURE; OFF ORIENTED SUBSTRATE;

SILICON CARBIDE;

EID: 0032680131     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00152-X     Document Type: Article

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