Electronic properties of intrinsic and doped amorphous silicon carbide films

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 290-294

  Vetter, M ^a   Voz, C ^a   Ferre, R ^a   Martin I ^a   Orpella, A ^a   Puigdollers, J ^a   Andreu, J ^b   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Amorphous silicon carbide; Conductivity; Meyer Neldel; Passivation

Indexed keywords

ACTIVATION ENERGY; CORRELATION THEORY; DEPOSITION; ELECTRONIC PROPERTIES; PASSIVATION; SILICON CARBIDE;

AMORPHOUS SILICON CARBIDE; FIELD-EFFECT PASSIVATION; MEYER-NELDEL; RECOMBINATION VELOCITY;

AMORPHOUS FILMS;

EID: 33646575607     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.11.108     Document Type: Article

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