Microstructure analysis of a-SiC:H thin films grown by high-growth-rate PECVD

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1380-1383

  Ricciardi, C ^a   Primiceli, A ^a   Germani, G ^b   Rusconi, A ^b   Giorgis, F ^a  

^a POLITECNICO DI TORINO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Amorphous semiconductors; Chemical vapor deposition; Composition; Crystal growth; FTIR measurements; Optical spectroscopy; Plasma deposition; Raman scattering; Raman spectroscopy

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH; DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICONES; SYNTHESIS (CHEMICAL);

AMORPHOUS SEMICONDUCTORS; FTIR MEASUREMENTS; OPTICAL SPECTROSCOPY; PLASMA DEPOSITION;

THIN FILMS;

EID: 33745510443     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.137     Document Type: Article

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