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Volumn 16, Issue 3, 2000, Pages 225-228

Growth of SiCN films by magnetron sputtering

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHITE; MAGNETRON SPUTTERING; NITRIDES; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0033727125     PISSN: 02670844     EISSN: None     Source Type: Journal    
DOI: 10.1179/026708400101517198     Document Type: Article
Times cited : (6)

References (26)
  • 17
    • 0003597031 scopus 로고
    • (ed. G. L. Harris), London, The Institution of Electrical Engineers
    • S. YOSHIDA: in 'Properties of silicon carbide', (ed. G. L. Harris), 74; 1995, London, The Institution of Electrical Engineers.
    • (1995) Properties of Silicon Carbide , pp. 74
    • Yoshida, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.