Spectroscopic characterization of thin SiC films

Diamond and Related Materials

Volumn 8, Issue 6, 1999, Pages 1148-1151

  Dimitrov, D B ^a   Papadimitriou, D ^b   Beshkov, G ^a  

^a Institute OJSolid State Physics   (Bulgaria)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

Electrical properties; Photoluminescence; Porous Si; Raman spectroscopy; RTA; SiC films; Structure

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DEHYDROGENATION; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; FILM PREPARATION; PHOTOLUMINESCENCE; POROUS SILICON; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SILICON CARBIDE;

DEFECT STATES;

THIN FILMS;

EID: 0032672846     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(99)00107-7     Document Type: Article

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