Nitrogen doping of SiC thin films deposited by RF magnetron sputtering

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 835-840

  Fraga, Mariana Amorim ^a   Massi, Marcos ^a   Oliveira, Ivo C ^a   Maciel, Homero S ^a   dos Santos Filho, Sebastião G ^b   Mansano, Ronaldo D ^b  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; DEPOSITION; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; NITROGEN; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRUCTURE (COMPOSITION); THIN FILMS; X RAY DIFFRACTION ANALYSIS;

NITROGEN DOPING; RADIOFREQUENCY MAGNETRON SPUTTERING; SILICON CARBIDE THIN FILMS;

SILICON CARBIDE;

EID: 44249090025     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9487-y     Document Type: Conference Paper

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