Effects of CF4 addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH4+SiH 4+H2

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 6, 2003, Pages 1993-1995

  Wang, Guoju ^a,b   Wang, Bo ^a   Huang, Anping ^a   Zhu, Mankang ^a   Wang, Biben ^a   Yan, Hui ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b LIAOCHENG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; BINDING ENERGY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CONTAMINATION; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCHING EFFECT; HOT FILAMENT CHEMICAL VAPOR DEPOSITION;

SILICON CARBIDE;

EID: 0842344413     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1622674     Document Type: Article

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