Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell

Journal of Semiconductors

Volumn 31, Issue 10, 2010, Pages

  Qingwen, Deng ^a   Xiaoliang, Wang ^a   Hongling, Xiao ^a   Zeyu, Ma ^a   Xiaobin, Zhang ^a   Qifeng, Hou ^a   Jinmin, Li ^a   Zhanguo, Wang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AMPS; Efficiency; Simulation; Solar cell

Indexed keywords

A-SIC:H; AMPS; C-SI SOLAR CELL; DOPING DENSITIES; INTERFACE RECOMBINATION VELOCITY; INTRINSIC LAYER; N-TYPE LAYERS; NEW APPROACHES; NOVEL STRUCTURES; P-TYPE; PHOTONIC STRUCTURE; POWER CONVERSION EFFICIENCIES; SIMULATION; THEORETICAL INVESTIGATIONS; WINDOW LAYER;

CONVERSION EFFICIENCY; MICROELECTRONICS; SILICON CARBIDE; SILICON SOLAR CELLS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 78649400923     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/10/103003     Document Type: Article

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