On the structural properties of a-Si1-xCx:H thin films

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1324-1329

  Mastelaro, V ^a   Flank, A M ^b   Fantini, M C A ^c   Bittencourt, D R S ^c   Carreno M N P ^c   Pereyra, I ^c  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b SYNCHROTRON SOLEIL   (France)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRONIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METHANE; PLASMAS; RESONANCE; SILANES; SILICON CARBIDE; STRUCTURE (COMPOSITION); X RAY SPECTROSCOPY;

HYDROGENATED AMORPHOUS SILICON CARBIDE; MICROVOID; OPTICAL GAP; SMALL ANGLE X RAY SCATTERING; VISIBLE SPECTROMETRY; X RAY ABSORPTION FINE STRUCTURE; X RAY ABSORPTION NEAR EDGE SPECTROSCOPY;

THIN FILMS;

EID: 0030083860     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361029     Document Type: Article

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