메뉴 건너뛰기




Volumn 50, Issue 3, 2006, Pages 460-467

Amorphous silicon carbide TFTs

Author keywords

SiC TFTs; TFT modeling; TFT simulation

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; COMPUTER SIMULATION; NANOSTRUCTURED MATERIALS; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE;

EID: 33748641740     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.001     Document Type: Article
Times cited : (8)

References (14)
  • 1
    • 0036953578 scopus 로고    scopus 로고
    • Myong SY, Kim SS, Chevaleevski O, Jun KH, Konagai M, Lim KS. Optimization of p-a-SiC:H/p-nc-SiC:H double layer structure for a high efficiency a-Si:H based solar cell. In: Proceeding of 29th IEEE photovoltaic specialists conference, Louisiana, USA, 2002 May 20-24, p. 1226-9.
  • 3
    • 0030165366 scopus 로고    scopus 로고
    • x:H thin films obtained under starving plasma deposition conditions
    • x:H thin films obtained under starving plasma deposition conditions. J Non-Cryst Solids 201 (1996) 110-118
    • (1996) J Non-Cryst Solids , vol.201 , pp. 110-118
    • Pereyra, I.1    Carreño, M.N.P.2
  • 4
    • 84912949544 scopus 로고
    • The structural, chemical and compositional nature of amorphous silicon carbide films
    • Hicks S.E., Fitzgerald A.G., and Baker S.H. The structural, chemical and compositional nature of amorphous silicon carbide films. Philos Mag B 62 (1990) 193-212
    • (1990) Philos Mag B , vol.62 , pp. 193-212
    • Hicks, S.E.1    Fitzgerald, A.G.2    Baker, S.H.3
  • 7
    • 0035390039 scopus 로고    scopus 로고
    • New Procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
    • Cerdeira A., Estrada M., García R., Ortiz-Conde A., and García Sanchez F.J. New Procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions. Solid-State Electron 45 (2001) 1077-1080
    • (2001) Solid-State Electron , vol.45 , pp. 1077-1080
    • Cerdeira, A.1    Estrada, M.2    García, R.3    Ortiz-Conde, A.4    García Sanchez, F.J.5
  • 11
    • 0026819795 scopus 로고
    • A new recombination model for device simulation including tunneling
    • Hurkx G.A.M., Klassen D.B.M., and Knuvers M.P.G. A new recombination model for device simulation including tunneling. IEEE Trans Electron Dev 39 (1992) 331-338
    • (1992) IEEE Trans Electron Dev , vol.39 , pp. 331-338
    • Hurkx, G.A.M.1    Klassen, D.B.M.2    Knuvers, M.P.G.3
  • 12
    • 0001199397 scopus 로고
    • Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
    • Jackson W.B., Marshal J.M., and Moyer M.D. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon. Phys Rev B 39 (1989) 1164-1179
    • (1989) Phys Rev B , vol.39 , pp. 1164-1179
    • Jackson, W.B.1    Marshal, J.M.2    Moyer, M.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.