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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 240, Issue 3, 2005, Pages 741-751

Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering

(7) Yao, Zh Q a Yang, P a Huang, N a Sun, H a Wan, G J a Leng, Y X a Chen, J Y a

a SOUTHWEST JIAOTONG UNIVERSITY (China)

Author keywords

Chemical bonding configuration; Close field unbalanced magnetron sputtering; Composition; Pulsed bias voltage; SiNx films

Indexed keywords

CHEMICAL BONDS; COMPOSITION; HARDNESS; INDUSTRIAL APPLICATIONS; MAGNETRON SPUTTERING; MORPHOLOGY; POROSITY; SILICON NITRIDE; SURFACES; THERMODYNAMIC STABILITY;

CHEMICAL BONDING CONFIGURATION; CLOSE-FIELD UNBALANCED MAGNETRON SPUTTERING; PULSED BIAS VOLTAGE; SINX FILMS;

THIN FILMS;

EID: 27644522020 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2005.06.004 Document Type: Article

Times cited : (20)

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