SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 327-330

Electrical and mechanical properties of post-annealed SiCxN y films

(5) Fraga, M A a Massi, M a Oliveira, I C a Cruz, N C b Dos Santos Filho, S G c

a INSTITUTO TECNOLÓGICO DE AERONÁUTICA (Brazil)

b SÃO PAULO STATE UNIVERSITY UNESP (Brazil)

c UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

Elastic modulus; Hardness; Resistivity; Silicon carbon nitride; Thermal annealing

Indexed keywords

AMORPHOUS SILICON; ARGON; CARBON NITRIDE; ELASTIC MODULI; ELECTRIC CONDUCTIVITY; HARDNESS; MAGNETRON SPUTTERING; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITROGEN; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

ARGON ATMOSPHERES; AS-DEPOSITED FILMS; ELECTRICAL AND MECHANICAL PROPERTIES; ELECTRICAL CHARACTERISTIC; METAL INSULATOR SEMICONDUCTOR STRUCTURES; RF-MAGNETRON SPUTTERING; SILICON CARBON NITRIDE; THERMAL-ANNEALING;

ANNEALING;

EID: 79251649240 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.327 Document Type: Conference Paper

Times cited : (1)

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