Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 121-128

  Kolodzey, James ^a   Chowdhury, Enam Ahmed ^a   Adam, Thomas N ^a   Qui, Guohua ^a   Rau, I ^a   Olowolafe, Johnson Olufemi ^a   Suehle, John S ^b   Chen, Yuan ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MIS DEVICES; MOS CAPACITORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; THERMAL EFFECTS; THERMOOXIDATION;

ALUMINUM OXIDE INSULATORS; DIELECTRIC BREAKDOWN; FRENKEL-POOLE EMISSION; MIS CAPACITORS; SEMICONDUCTOR INSULATOR INTERFACES;

ELECTRIC INSULATORS;

EID: 0033882815     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817577     Document Type: Article

References (44)