SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 13, Issue 11, 2010, Pages

Electrical properties of pulsed laser deposited Y2 O3 Gate Oxide on 4H-SiC

(5) Quah, Hock Jin a Lim, Way Foong a Wimbush, Stuart C b Lockman, Zainovia a Cheong, Kuan Yew a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; BARRIER HEIGHTS; CONDUCTION BAND EDGE; DIELECTRIC BREAKDOWNS; ELECTRICAL PROPERTY; FOWLER-NORDHEIM TUNNELING; GATE OXIDE; INTERFACE TRAP DENSITY; POST DEPOSITION ANNEALING; PULSED LASER;

ELECTRON MOBILITY; GATES (TRANSISTOR); PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR LASERS; SILICON CARBIDE; YTTRIUM; YTTRIUM OXIDE;

ELECTRIC PROPERTIES;

EID: 77956575557 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3481926 Document Type: Article

Times cited : (32)

References (23)

1
- 18844459488
- W. J. Choyke, H. Matsunami, and G. Pensl, Editors, Springer-Verlag, Berlin.
- Silicon Carbide: Recent Major Advances, W. J. Choyke, H. Matsunami, and, G. Pensl, Editors, p. 785, Springer-Verlag, Berlin (2004).
- (2004) Silicon Carbide: Recent Major Advances , pp. 785

2
- 0000819907
- APPLAB 0003-6951,. 10.1063/1.126769
- P. T. Lai, S. Chakraborty, C. L. Chan, and Y. C. Chang, Appl. Phys. Lett. APPLAB 0003-6951, 76, 3744 (2000). 10.1063/1.126769
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3744
- Lai, P.T.¹ Chakraborty, S.² Chan, C.L.³ Chang, Y.C.⁴

3
- 37649021780
- PYLAAG 0375-9601,. 10.1016/j.physleta.2007.07.054
- K. Y. Cheong, W. Bahng, and N. K. Kim, Phys. Lett. A PYLAAG 0375-9601, 372, 529 (2008). 10.1016/j.physleta.2007.07.054
- (2008) Phys. Lett. A , vol.372 , pp. 529
- Cheong, K.Y.¹ Bahng, W.² Kim, N.K.³

4
- 0037442436
- JAPIAU 0021-8979,. 10.1063/1.1539541
- K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, and J. R. Williams, J. Appl. Phys. JAPIAU 0021-8979, 93, 2257 (2003). 10.1063/1.1539541
- (2003) J. Appl. Phys. , vol.93 , pp. 2257
- McDonald, K.¹ Feldman, L.C.² Weller, R.A.³ Chung, G.Y.⁴ Tin, C.C.⁵ Williams, J.R.⁶

5
- 77749314693
- THSFAP 0040-6090,. 10.1016/j.tsf.2009.11.003
- K. Y. Cheong, J. H. Moon, H. J. Kim, W. Bahng, and N. K. Kim, Thin Solid Films THSFAP 0040-6090, 518, 3255 (2010). 10.1016/j.tsf.2009.11.003
- (2010) Thin Solid Films , vol.518 , pp. 3255
- Cheong, K.Y.¹ Moon, J.H.² Kim, H.J.³ Bahng, W.⁴ Kim, N.K.⁵

6
- 63849096007
- MSFOEP 0255-5476,. 10.4028/www.scientific.net/MSF.600-603.799
- K. Fujihira, S. Yoshida, N. Miura, Y. Nakao, M. Imaizumi, T. Takami, and T. Oomori, Mater. Sci. Forum MSFOEP 0255-5476, 600-603, 799 (2009). 10.4028/www.scientific.net/MSF.600-603.799
- (2009) Mater. Sci. Forum , vol.600 , pp. 799
- Fujihira, K.¹ Yoshida, S.² Miura, N.³ Nakao, Y.⁴ Imaizumi, M.⁵ Takami, T.⁶ Oomori, T.⁷

7
- 69749127228
- MSFOEP 0255-5476,. 10.4028/www.scientific.net/MSF.615-617.521
- M. Grieb, M. Noborid, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, and H. Ryssel, Mater. Sci. Forum MSFOEP 0255-5476, 615-617, 521 (2009). 10.4028/www.scientific.net/MSF.615-617.521
- (2009) Mater. Sci. Forum , vol.615 , pp. 521
- Grieb, M.¹ Noborid, M.² Peters, D.³ Bauer, A.J.⁴ Friedrichs, P.⁵ Kimoto, T.⁶ Ryssel, H.⁷

8
- 0033096736
- IETDAI 0018-9383,. 10.1109/16.748872
- L. A. Lipkin and J. W. Palmour, IEEE Trans. Electron Devices IETDAI 0018-9383, 46, 525 (1999). 10.1109/16.748872
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 525
- Lipkin, L.A.¹ Palmour, J.W.²

9
- 77950925299
- JALCEU 0925-8388,. 10.1016/j.jallcom.2010.03.009
- W. F. Lim, K. Y. Cheong, and Z. Lockman, J. Alloys Compd. JALCEU 0925-8388, 497, 195 (2010). 10.1016/j.jallcom.2010.03.009
- (2010) J. Alloys Compd. , vol.497 , pp. 195
- Lim, W.F.¹ Cheong, K.Y.² Lockman, Z.³

10
- 36248970008
- 3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
- DOI 10.1063/1.2805742
- C. M. Tanner, Y. C. Perng, C. Frewin, S. E. Saddow, and J. P. Chang, Appl. Phys. Lett. APPLAB 0003-6951, 91, 203510 (2007). 10.1063/1.2805742 (Pubitemid 350128962)
- (2007) Applied Physics Letters , vol.91 , Issue.20 , pp. 203510
- Tanner, C.M.¹ Perng, Y.-C.² Frewin, C.³ Saddow, S.E.⁴ Chang, J.P.⁵

11
- 34247531815
- MSFOEP 0255-5476,. 10.4028/www.scientific.net/MSF.527-529.1083
- J. H. Moon, D. I. Eom, S. Y. No, H. K. Song, J. H. Yim, H. J. Na, J. B. Lee, and H. J. Kim, Mater. Sci. Forum MSFOEP 0255-5476, 527-529, 1083 (2006). 10.4028/www.scientific.net/MSF.527-529.1083
- (2006) Mater. Sci. Forum , vol.527 , pp. 1083
- Moon, J.H.¹ Eom, D.I.² No, S.Y.³ Song, H.K.⁴ Yim, J.H.⁵ Na, H.J.⁶ Lee, J.B.⁷ Kim, H.J.⁸

12
- 34547425844
- 2 films deposited on 4H-SiC by atomic layer deposition
- DOI 10.1063/1.2734956
- M. Wolborski, M. Rooth, M. Bakowski, and A. Hallen, J. Appl. Phys. JAPIAU 0021-8979, 101, 124105 (2007). 10.1063/1.2734956 (Pubitemid 47158131)
- (2007) Journal of Applied Physics , vol.101 , Issue.12 , pp. 124105
- Wolborski, M.¹ Rooth, M.² Bakowski, M.³ Halln, A.⁴

13
- 33746531190
- Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide
- DOI 10.1116/1.2214702
- A. Fissel, M. Czernohorsky, and H. J. Osten, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 24, 2115 (2006). 10.1116/1.2214702 (Pubitemid 44140835)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.4 , pp. 2115-2118
- Fissel, A.¹ Czernohorsky, M.² Osten, H.J.³

14
- 0034322129
- 3, grown by ion beam sputtering on Si
- DOI 10.1088/0022-3727/33/22/304
- R. J. Gaboriaud, F. Pailloux, P. Guerin, and F. Paumier, J. Phys. D JPAPBE 0022-3727, 33, 2884 (2000). 10.1088/0022-3727/33/22/304 (Pubitemid 32024916)
- (2000) Journal of Physics D: Applied Physics , vol.33 , Issue.22 , pp. 2884-2889
- Gaboriaud, R.J.¹ Pailloux, F.² Guerin, P.³ Paumier, F.⁴

15
- 0037285411
- CRYEF8 1463-0184,. 10.1016/S1463-0184(02)00026-6
- F. Paumier, R. J. Gaboriaud, and A. R. Kaul, Cryst. Eng. CRYEF8 1463-0184, 5, 169 (2002). 10.1016/S1463-0184(02)00026-6
- (2002) Cryst. Eng. , vol.5 , pp. 169
- Paumier, F.¹ Gaboriaud, R.J.² Kaul, A.R.³

16
- 34248667023
- Oxygen vacancies in high-k oxides
- DOI 10.1016/j.mee.2007.04.020, PII S016793170700370X, INFOS 2007
- K. Tse, D. Liu, K. Xiong, and J. Robertson, Microelectron. Eng. MIENEF 0167-9317, 84, 2028 (2007). 10.1016/j.mee.2007.04.020 (Pubitemid 46776944)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2028-2031
- Tse, K.¹ Liu, D.² Xiong, K.³ Robertson, J.⁴

17
- 0004071496
- 2nd ed., John Wiley & Sons, New York.
- D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed., p. 337, John Wiley & Sons, New York (1998).
- (1998) Semiconductor Material and Device Characterization , pp. 337
- Schroder, D.K.¹

18
- 11144328852
- 2Si thermal oxidation: A simple route to a high-k gate dielectric on 4H-SiC
- DOI 10.1149/1.1819852, 3
- A. Ṕrez-Tomás, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennegues, and J. Stoemenos, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 7, F93 (2004). 10.1149/1.1819852 (Pubitemid 40025609)
- (2004) Electrochemical and Solid-State Letters , vol.7 , Issue.12
- Perez-Tomas, A.¹ Godignon, P.² Montserrat, J.³ Millan, J.⁴ Mestres, N.⁵ Vennegues, P.⁶ Stoemenos, J.⁷

19
- 0036646896
- 2O oxidation on interface properties of 6H-SiC MOS capacitors
- DOI 10.1109/LED.2002.1015220, PII S0741310602062456
- P. T. Lai, J. P. Xu, and C. L. Chan, IEEE Electron Device Lett. EDLEDZ 0741-3106, 23, 410 (2002). 10.1109/LED.2002.1015220 (Pubitemid 34835327)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.7 , pp. 410-412
- Lai, P.T.¹ Xu, J.P.² Chan, C.L.³

20
- 37749050006
- ASUSEE 0169-4332,. 10.1016/j.apsusc.2007.08.012
- K. J. Wang and K. Y. Cheong, Appl. Surf. Sci. ASUSEE 0169-4332, 254, 1981 (2008). 10.1016/j.apsusc.2007.08.012
- (2008) Appl. Surf. Sci. , vol.254 , pp. 1981
- Wang, K.J.¹ Cheong, K.Y.²

21
- 43049147116
- Current conduction mechanisms in atomic-layer-deposited HfO2 /nitrided SiO2 stacked gate on 4H silicon carbide
- DOI 10.1063/1.2908870
- K. Y. Cheong, J. H. Moon, H. J. Kim, W. Bahng, and N. K. Kim, J. Appl. Phys. JAPIAU 0021-8979, 103, 084113 (2008). 10.1063/1.2908870 (Pubitemid 351623617)
- (2008) Journal of Applied Physics , vol.103 , Issue.8 , pp. 084113
- Cheong, K.Y.¹ Moon, J.H.² Kim, H.J.³ Bahng, W.⁴ Kim, N.-K.⁵

22
- 33746281113
- Band offsets of high K gate oxides on III-V semiconductors
- DOI 10.1063/1.2213170
- J. Robertson and B. Falabretti, J. Appl. Phys. JAPIAU 0021-8979, 100, 014111 (2006). 10.1063/1.2213170 (Pubitemid 44102019)
- (2006) Journal of Applied Physics , vol.100 , Issue.1 , pp. 014111
- Robertson, J.¹ Falabretti, B.²

23
- 0000853312
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.78.2437
- V. V. Afanas'ev and A. Stesmans, Phys. Rev. Lett. PRLTAO 0031-9007, 78, 2437 (1997). 10.1103/PhysRevLett.78.2437
- (1997) Phys. Rev. Lett. , vol.78 , pp. 2437
- Afanas'Ev, V.V.¹ Stesmans, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.