Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5682-5686

  Cheong, Kuan Yew ^a,b   Dimitrijev, Sima ^a   Han, Jisheng ^a   Harrison, H Barry ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b SCHOOL OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; GATES (TRANSISTOR); INTERFACES (MATERIALS); X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL CHARACTERIZATION;

SILICON CARBIDE;

EID: 0037904757     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555696     Document Type: Article

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