Sol-gel ZrO2 and ZrO2-Al2O3 nanocrystalline thin films on Si as high-k dielectrics

Materials Science and Engineering: B

Volumn 165, Issue 3, 2009, Pages 178-181

  Vitanov, P ^a   Harizanova, A ^a   Ivanova, T ^a   Trapalis, Ch ^b   Todorova, N ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Aluminium oxide; Electrical properties; Sol gel processing; XRD

Indexed keywords

ALUMINA; AMORPHOUS FILMS; ANNEALING; DIELECTRIC PROPERTIES OF SOLIDS; GRAIN BOUNDARIES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOW-K DIELECTRIC; NANOCRYSTALS; OXIDE FILMS; SILICA; SILICON; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; TITANIUM DIOXIDE; ZIRCONIA;

ALTERNATIVE MATERIALS; FILM-THICKNESS; NANOCRYSTALLINE THIN FILMS; SI SUBSTRATES; SOL'GEL; SOL- GEL METHODS; SOL-GEL PROCESSING; STRUCTURAL AND ELECTRICAL PROPERTIES; THIN LAYERS; XRD;

ALUMINUM OXIDE;

EID: 71649096550     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.09.002     Document Type: Article

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