Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis

Progress in Crystal Growth and Characterization of Materials

Volumn 55, Issue 3-4, 2009, Pages 63-97

  Rai, Raghaw S ^a   Subramanian, Swaminathan ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

A1 Characterization; A1 Failure Analysis; A1 sub nanometer device features; A1 Transmission Electron microscopy; B2 Semiconducting materials; B3 Semiconducting devices

Indexed keywords

A1 CHARACTERIZATION; A1 SUB-NANOMETER DEVICE FEATURES; B2 SEMICONDUCTING MATERIALS; NANOMETER DEVICE; SEMICONDUCTING MATERIALS;

CONDUCTIVE FILMS; ELECTRON MICROSCOPES; ELECTRONS; FOCUSED ION BEAMS; GATE DIELECTRICS; GATES (TRANSISTOR); QUALITY ASSURANCE; SAFETY FACTOR; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

FAILURE ANALYSIS;

EID: 71649102255     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pcrysgrow.2009.09.002     Document Type: Article

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