Specific site cross-sectional sample preparation using focused ion beam for transmission electron microscopy

Progress in Crystal Growth and Characterization of Materials

Volumn 36, Issue 1-2, 1998, Pages 99-122

  Schraub, David M ^a   Rai, Raghaw S ^a,b,c  

^a MOTOROLA INC   (United States)

^b BANARAS HINDU UNIVERSITY   (India)

^c Bandgap Technology Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; INTEGRATED CIRCUITS; ION BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

FOCUSED ION BEAMS (FIB);

CRYSTAL GROWTH;

EID: 0031618847     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-8974(98)00005-9     Document Type: Article

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