Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy

Nature

Volumn 423, Issue 6937, 2003, Pages 270-273

  Hÿtch, Martin J ^a   Putaux, Jean Luc ^b,c   Pénisson, Jean Michel ^d  

^a CNRS   (France)

^b CENTRE DE RECHERCHES SUR LES MACROMOLÉCULES VÉGÉTALES CERMAV CNRS   (France)

^c UNIV GRENOBLE ALPES   (France)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ELECTRON MICROSCOPY;

ACCURACY; ANISOTROPY; ARTICLE; CHEMICAL STRUCTURE; CRYSTAL; ELASTICITY; ELECTRON MICROSCOPY; MATERIALS; MEASUREMENT; PRIORITY JOURNAL; SCIENCE; SEMICONDUCTOR; VALIDATION PROCESS;

EID: 5444247603     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature01638     Document Type: Article

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