Hafnium silicon oxide films prepared by atomic layer deposition

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 2-5

  Kukli, Kaupo ^a,c   Ritala, Mikko ^a   Leskelä, Markku ^a   Sajavaara, Timo ^a   Keinonen, Juhani ^a   Gilmer, David C ^b   Tobin, Philip J ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b MOTOROLA INC   (United States)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

Atomic layer deposition; Dielectrics; Hafnium silicate

Indexed keywords

CAPACITANCE MEASUREMENT; DEPOSITION; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; HYDROLYSIS; LEAKAGE CURRENTS; MIXTURES; PERMITTIVITY; SURFACE REACTIONS;

ATOMIC LAYER DEPOSITION; HAFNIUM SILICATES; MIXTURE FILMS;

METALLIC FILMS;

EID: 2342486061     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.019     Document Type: Conference Paper

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