Off-axis electron holography for 2D dopant profiling in p- and n-metal oxide semiconductor field effect transistors (MOSFETs)

Microscopy and Microanalysis

Volumn 9, Issue SUPPL. 3, 2003, Pages 240-241

  Vogel, K ^a   Lenk, A ^a   Lichte, H ^a   Engelmann, H J ^b   Muhle U ^c   Freitag, B ^d  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142059719     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/s1431927603022347     Document Type: Conference Paper

References (4)

1. W.D.Rau, P.Schwander, F.H.Baumann, W.Höppner, A.Ourmazd, Phys.Rev.Lett. 82(1999)2614
2. A.Lenk, Diploma Thesis, University of Dresden, 2001
3. U.Mühle, A.Lenk, M.Lehmann, H.Lichte, Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis (ISTFA), 2002, 39-46
4. A.Lenk, U.Mühle, H.Lichte, this conference proceedings