Quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si pMOSFETs using off-axis electron holography

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3336-3341

  Han, Myung Geun ^a   Fejes, Peter ^b   Xie, Qianghua ^b   Bagchi, Sandeep ^b   Taylor, Bill ^b   Conner, James ^b   McCartney, Martha R ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

2 D dopant profiling; Electron holography; Gate length measurement; Holography; Measurement; MOSFET; Two dimensional displays

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROSTATICS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON; TWO DIMENSIONAL;

ELECTRIC FIELD INTENSITY; ELECTROSTATIC POTENTIAL; OFF-AXIS ELECTRON HOLOGRAPHY; TWO-DIMENSIONAL DOPANT PROFILING;

ELECTRON HOLOGRAPHY;

EID: 36849066232     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908901     Document Type: Article

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