Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si

Nature

Volumn 416, Issue 6883, 2002, Pages 826-829

  Voyles, P M ^a   Muller, David A ^a   Grazul, J L ^a   Citrin, P H ^a   Gossmann, H J L ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CHARGE CARRIERS; CRYSTAL ATOMIC STRUCTURE; INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

DARK-FIELD SCANNING ELECTRON MICROSCOPY;

TRANSISTORS;

ANTIMONY; SILICON;

NANOTECHNOLOGY;

ARTICLE; ATOM; CHEMICAL STRUCTURE; ELECTRON; MATHEMATICAL ANALYSIS; PRIORITY JOURNAL; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR;

EID: 0037171741     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/416826a     Document Type: Article

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