Physical and electrical characterization of poly silicon vs. TiN gate electrodes for HfO2 transistors

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 259-263

  Lysaght, Patrick S ^a   Peterson, Jeff J ^a   Foran, Brendan ^a   Young, Chadwin D ^a   Bersuker, Gennadi ^a   Huff, Howard R ^a  

^a SEMATECH   (United States)

Author keywords

EELS; Electrodes; HAAFD STEM; HfO2; Transistors

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; HAFNIUM COMPOUNDS; POLYSILICON; TITANIUM NITRIDE; X RAY SPECTROSCOPY;

AMORPHOUS REACTIONS; ELECTRICAL CHARACTERIZATION; POLYSILICON ELECTRODES;

TRANSISTORS;

EID: 9544240368     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.111     Document Type: Conference Paper

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