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Volumn 2006, Issue , 2006, Pages 343-350

Challenges in evaluating thickness, phase, and strain in semiconductor devices using high-resolution transmission electron microscopy

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[No Author keywords available]

Indexed keywords


EID: 33847632854     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (16)
  • 3
    • 31144436687 scopus 로고    scopus 로고
    • Strain analysis in Si substrates under uniaxial and biaxial stress by convergent beam electron diffraction
    • S. L. Toh, K. P. Loh, C. B. Boothroyd, K. Li, C. H. Ang, and L. Chan, Strain analysis in Si substrates under uniaxial and biaxial stress by convergent beam electron diffraction, J. Vac. Sci. Technol. B 23 (2005) 940-946.
    • (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 940-946
    • Toh, S.L.1    Loh, K.P.2    Boothroyd, C.B.3    Li, K.4    Ang, C.H.5    Chan, L.6
  • 8
    • 33847622321 scopus 로고    scopus 로고
    • Seth Taylor, John Mardinly and Michael O'Keefe, Microsc. Microanal. 6 (Suppl.2:Proceedings), MSA (2000) 1080.
    • Seth Taylor, John Mardinly and Michael O'Keefe, Microsc. Microanal. 6 (Suppl.2:Proceedings), MSA (2000) 1080.
  • 15
    • 33847032747 scopus 로고    scopus 로고
    • th Elect. Soc. Meet
    • th Elect. Soc. Meet. 583 (2002) 2002.
    • (2002) , vol.583 , pp. 2002
    • Xiang, Q.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.