Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 940-946

  Toh, Suey Li ^a   Loh, K P ^a   Boothroyd, C B ^b   Li, K ^c   Ang, C H ^c   Chan, L ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; FIELD EFFECT TRANSISTORS; ION BEAMS; MOS DEVICES; STRAIN MEASUREMENT; STRESS ANALYSIS;

STRAIN ANALYSIS; STRAIN PROPAGATION;

SILICON;

EID: 31144436687     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1924583     Document Type: Article

References (21)

1. A. Toda, N. Ikarashi, and H. Ono, J. Cryst. Growth 210, 341 (2000).
2. A. Toda, N. Ikarashi, H. Ono, S. Ito, T. Toda, and K. Imai, Appl. Phys. Lett. 79, 4243 (2001).
3. C. Stuer, J. Van Landuyt, H. Bender, R. Rooyackers, and G. Badenes, Mater. Sci. Semicond. Process. 4, 117 (2001).
4. C. Stuer, J. Van Landuyt, H. Bender, I. De Wolf, R. Rooyackers, and G. Badenes, J. Electrochem. Soc. 148, G597 (2001).
5. S. Ito, H. Namba, T. Hirata, K. Ando, S. Koyama, N. Ikezawa, T. Suzuki, T. Saitoh, and T. Horiuchi, Microelectron. Reliab. 42, 201 (2002).
6. A. Shimizu, K. Hachimine, N. Ohki, H. Ohta, M. Koguchi, Y. Nonaka, H. Sato, and F. Ootsuka, Tech. Dig. - Int. Electron Devices Meet. 19.4.1 (2001).
7. S. Frabboni, F. Gambetta, A. Armigliato, R. Balboni, S. Balboni, and F. Cembali, Phys. Rev. B 60, 13750 (1999).
8. S. Krämer, C. A. Volkert, and J. Mayer, Microsc. Microanal. 9, 390 (2003).
9. V. Senez, A. Armigliato, I. De Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, J. Appl. Phys. 94, 5574 (2003).
10. J. M. Zuo, Ultramicroscopy 41, 211 (1992).
11. S. Krämer and J. Mayer, J. Microsc. 194, 2 (1999).
12. L. Cĺment, R. Pantel, L. F. Tz. Kwakman, and J. L. Rouvìre, Appl. Phys. Lett. 85, 651 (2004).
13. P. Stadelmann, Microsc. Microanal. 9, 60 (2003).
14. R. C. Hibbeler, Mechanics of Materials, 3rd ed. (Prentice Hall, Englewood Cliffs, N. J., 1997), p. 491.
15. V. Holý, U. Pietsch, and T. Baumbach, High-Resolution X-Ray Scattering from Thin Films and Multilayers (Springer, New York, 1999), Chap..
16. A. Armigliato, R. Balboni, S. Frabboni, A. Benedetti, A. G. Cullis, G. P. Carnevale, P. Colpani, and G. Pavia, Mater. Sci. Semicond. Process. 4, 97 (2001).
17. D. W. Moon and H. I. Lee, Current Appl. Phys. 3, 45 (2003).
18. Jan H. Van Der Merwe and N. G. Van Der Berg, Surf. Sci. 32, 1 (1972).
19. G. Heigl, G. Span, and E. Kasper, Thin Solid Films 222, 184 (1992).
20. J. W. Matthews, in Epitaxial Growth Part B, edited by, J. W. Matthews, (Academic, New York, 1975), Chap., pp. 560-607.
21. E. Kasper and H.-J. Herzog, Thin Solid Films 44, 357 (1977).