Implanted gallium-ion concentrations of focused-ion-beam prepared cross sections

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1907-1913

  Ishitani, T ^a   Koike, H ^a   Yaguchi, T ^a   Kamino, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000045911     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590106     Document Type: Article

References (14)

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