Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Ang, Kah Wee ^a   Chui, King Jien ^a   Bliznetsov, Vladimir ^b   Tung, Chih Hang ^b   Du, Anyan ^b   Balasubramanian, Narayanan ^b   Samudra, Ganesh ^a   Li, Ming Fu ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FILTERING PROCESSES; LATTICE STRAIN ANALYSIS; STRESSORS; TRANSISTOR STRUCTURES;

CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; EPITAXIAL GROWTH; FOURIER TRANSFORMS; HOLE MOBILITY; LATTICE CONSTANTS; PLASMA ETCHING; PRECIPITATION (CHEMICAL); SILICON COMPOUNDS; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

MOSFET DEVICES;

EID: 17044429048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1871351     Document Type: Article

References (6)

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