메뉴 건너뛰기




Volumn 7, Issue 2, 2003, Pages 161-171

Local behavior of complex materials: Scanning probes and nano structure

Author keywords

Complex materials; Multiple modulation; Relaxation; Scanning probe microscopy; Spatial resolution

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; ELECTRIC IMPEDANCE; MONOLAYERS; PERMITTIVITY; SCANNING; THIN FILMS;

EID: 0142010419     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(03)00047-0     Document Type: Article
Times cited : (23)

References (98)
  • 1
    • 85031051330 scopus 로고    scopus 로고
    • As determined from COMPENDEX for
    • As determined from COMPENDEX for 2002.
    • (2002)
  • 4
    • 18944378184 scopus 로고    scopus 로고
    • Classification of scanning probe microscopies - (technical report)
    • Friedbacher G.Fuchs H.Classification of scanning probe microscopies - (technical report) Pure and applied chemistry 71 1999 1337-1357
    • (1999) Pure and Applied Chemistry , vol.71 , pp. 1337-1357
    • Friedbacher, G.1    Fuchs, H.2
  • 5
    • 0000907335 scopus 로고    scopus 로고
    • Scanning Probe Microscopy
    • And the references therein
    • Bottomley L. Scanning Probe Microscopy. Anal Chem 1998;70:425R-75R. And the references therein.
    • (1998) Anal Chem , vol.70
    • Bottomley, L.1
  • 6
    • 0033698091 scopus 로고    scopus 로고
    • Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
    • An excellent review on SSRM, SCM and other dopant profiling techniques
    • De Wolf P, Stephenson R, Trenkler T, Clarysse T, Hantschel T, Vandervorst W. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy. J Vac Sci Technol 2000;B18:361-8. An excellent review on SSRM, SCM and other dopant profiling techniques.
    • (2000) J Vac Sci Technol , vol.18 B , pp. 361-368
    • De Wolf, P.1    Stephenson, R.2    Trenkler, T.3    Clarysse, T.4    Hantschel, T.5    Vandervorst, W.6
  • 8
    • 0040633560 scopus 로고    scopus 로고
    • Low weight spreading resistance profiling of ultrashallow dopant profiles
    • De Wolf P.Clarysse T.Vandervorst W.Low weight spreading resistance profiling of ultrashallow dopant profiles J Vac Sci Technol B16 1998 401-405
    • (1998) J Vac Sci Technol , vol.16 B , pp. 401-405
    • De Wolf, P.1    Clarysse, T.2    Vandervorst, W.3
  • 9
    • 0037867862 scopus 로고
    • Scanning capacitance microscopy
    • Matey J.R.Blanc J.Scanning capacitance microscopy J. Appl. Phys. 57 1985 1437-1444
    • (1985) J. Appl. Phys. , vol.57 , pp. 1437-1444
    • Matey, J.R.1    Blanc, J.2
  • 10
    • 36449009560 scopus 로고
    • Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy
    • Barrett R.C.Quate C.F.Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy J Appl Phys 70 1991 2725-2733
    • (1991) J Appl Phys , vol.70 , pp. 2725-2733
    • Barrett, R.C.1    Quate, C.F.2
  • 11
    • 0000949577 scopus 로고    scopus 로고
    • Quantitative two-dimensional dopant profiling of abrupt dopant profiles by cross-sectional scanning capacitance microscopy
    • Huang Y.Williams C.C.Wendman M.A.Quantitative two-dimensional dopant profiling of abrupt dopant profiles by cross-sectional scanning capacitance microscopy J Vac Sci Technol A14 1996 1168-1171
    • (1996) J Vac Sci Technol , vol.14 A , pp. 1168-1171
    • Huang, Y.1    Williams, C.C.2    Wendman, M.A.3
  • 12
    • 0000912781 scopus 로고    scopus 로고
    • Highly conductive diamond probes for scanning spreading resistance microscopy
    • Hantschel T.Niedermann P.Trenkler T.Vandervorst W.Highly conductive diamond probes for scanning spreading resistance microscopy Appl Phys Lett 76 2000 1603-1605
    • (2000) Appl Phys Lett , vol.76 , pp. 1603-1605
    • Hantschel, T.1    Niedermann, P.2    Trenkler, T.3    Vandervorst, W.4
  • 13
    • 0037113024 scopus 로고    scopus 로고
    • Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy
    • Marchiando J.T.Kopanski J.J.Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data J Appl Phys 92 2002 5798-5809
    • (2002) J Appl Phys , vol.92 , pp. 5798-5809
    • Marchiando, J.T.1    Kopanski, J.J.2
  • 14
    • 0037164773 scopus 로고    scopus 로고
    • Simulation of interface states effect on the scanning capacitance microscopy measurement of p-n junctions
    • Yang J.Kong F.C.J.Simulation of interface states effect on the scanning capacitance microscopy measurement of p-n junctions Appl Phys Lett 81 2002 4973-4975
    • (2002) Appl Phys Lett , vol.81 , pp. 4973-4975
    • Yang, J.1    Kong, F.C.J.2
  • 15
    • 5544255694 scopus 로고    scopus 로고
    • Imaging conducting surfaces and dielectric films by a scanning capacitance microscope
    • Lányi S.Török J.Rehurek P.Imaging conducting surfaces and dielectric films by a scanning capacitance microscope J Vac Sci Technol B14 1996 892-896
    • (1996) J Vac Sci Technol , vol.14 B , pp. 892-896
    • Lányi, S.1    Török, J.2    Rehurek, P.3
  • 16
    • 0000645519 scopus 로고    scopus 로고
    • Electrostatic forces acting on the tip in atomic force microscopy: Modelization and comparison with analytic expressions
    • Belaidi S.Girard P.Leveque G.Electrostatic forces acting on the tip in atomic force microscopy: modelization and comparison with analytic expressions J Appl Phys 81 1997 1023-1030
    • (1997) J Appl Phys , vol.81 , pp. 1023-1030
    • Belaidi, S.1    Girard, P.2    Leveque, G.3
  • 17
    • 0032498462 scopus 로고    scopus 로고
    • Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
    • Edwards H.McGlothlin R.San Martin R.U.E.Gribelyuk M. et al.Scanning capacitance spectroscopy: an analytical technique for pn-junction delineation in Si devices Appl Phys Lett 72 1998 698-700
    • (1998) Appl Phys Lett , vol.72 , pp. 698-700
    • Edwards, H.1    McGlothlin, R.2    San Martin, R.U.E.3    Gribelyuk, M.4
  • 18
    • 0037467944 scopus 로고    scopus 로고
    • Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements
    • Viscoly-Fisher I.Cohen S.R.Cahen A.Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements Appl Phys Lett 82 2003 556-558
    • (2003) Appl Phys Lett , vol.82 , pp. 556-558
    • Viscoly-Fisher, I.1    Cohen, S.R.2    Cahen, A.3
  • 20
    • 79956010667 scopus 로고    scopus 로고
    • Dopant profiling on semiconducting sample by scanning capacitance force microscopy
    • Kobayashi K.Yamada H.Matsushige K.Dopant profiling on semiconducting sample by scanning capacitance force microscopy Appl Phys Lett 81 2002 2629-2631
    • (2002) Appl Phys Lett , vol.81 , pp. 2629-2631
    • Kobayashi, K.1    Yamada, H.2    Matsushige, K.3
  • 21
    • 0001247747 scopus 로고
    • High resolution atomic force microscopy potentiometry
    • This work has demonstrated SSPM (or KPM) as a new potentiometric technique based on force nullifying feedback. SSPM (KPM) has later become one of the most widely used scanning probe technique
    • Weaver JMR, Abraham DW. High resolution atomic force microscopy potentiometry. J Vac Sci Technol 1991;B9:1559-61. This work has demonstrated SSPM (or KPM) as a new potentiometric technique based on force nullifying feedback. SSPM (KPM) has later become one of the most widely used scanning probe technique.
    • (1991) J Vac Sci Technol , vol.9 B , pp. 1559-1561
    • Weaver, J.M.R.1    Abraham, D.W.2
  • 23
    • 0002312029 scopus 로고    scopus 로고
    • Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis
    • Henning A.K.Hochwitz T.Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis Mater Sci Eng B-Solid State 42 1996 88-98
    • (1996) Mater Sci Eng B-Solid State , vol.42 , pp. 88-98
    • Henning, A.K.1    Hochwitz, T.2
  • 25
    • 0142112500 scopus 로고    scopus 로고
    • Kuk Y, Lyo IW, Jeon D, Park SI, editors, July
    • Cohen S, Efimov A. In: Kuk Y, Lyo IW, Jeon D, Park SI, editors, Proceedings of STM'99, 554 (July, 1999).
    • (1999) Proceedings of STM'99 , vol.554
    • Cohen, S.1    Efimov, A.2
  • 26
    • 0000723909 scopus 로고    scopus 로고
    • Local potential and polarization screening on ferroelectric surfaces
    • This work has both revealed the kinetics of charge screening effect on ferroelectrics and resolved the problem of unstable domain structures measured by SSPM. The polarization charge on a ferroelectric domain is found completely screened in air resulting in reverse sign of polarization measured by SSPM. This also implies that an accurate SSPM measurement has to be carried out in UHV
    • Kalinin SV, Bonnell DA. Local potential and polarization screening on ferroelectric surfaces. Phys Rev B 2001;63:1254111-3. This work has both revealed the kinetics of charge screening effect on ferroelectrics and resolved the problem of unstable domain structures measured by SSPM. The polarization charge on a ferroelectric domain is found completely screened in air resulting in reverse sign of polarization measured by SSPM. This also implies that an accurate SSPM measurement has to be carried out in UHV.
    • (2001) Phys Rev B , vol.63 , pp. 1254111-1254113
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 27
    • 0001293870 scopus 로고    scopus 로고
    • Noncontact scanning probe microscope potentiometry of surface charge patches: Origin and interpretation of time-dependent signals
    • Cunningham S.Larkin I.A.Davis J.H.Noncontact scanning probe microscope potentiometry of surface charge patches: origin and interpretation of time-dependent signals Appl Phys Lett 73 1998 123-125
    • (1998) Appl Phys Lett , vol.73 , pp. 123-125
    • Cunningham, S.1    Larkin, I.A.2    Davis, J.H.3
  • 28
    • 0032154245 scopus 로고    scopus 로고
    • How to extract spontaneous polarization information from experimental data in electric force microscopy
    • An important paper to show that accurate imaging of high permittivity thin films such as ferroelectrics by noncontact EFM is limited by the contribution of the air gap to the imaging signal and as a result, a contact SPM should be the better alternative
    • Franke K, Huelz H, Weihnacht M. How to extract spontaneous polarization information from experimental data in electric force microscopy. Surf Sci 1998;415:178-82. An important paper to show that accurate imaging of high permittivity thin films such as ferroelectrics by noncontact EFM is limited by the contribution of the air gap to the imaging signal and as a result, a contact SPM should be the better alternative.
    • (1998) Surf Sci , vol.415 , pp. 178-182
    • Franke, K.1    Huelz, H.2    Weihnacht, M.3
  • 30
    • 0005291416 scopus 로고    scopus 로고
    • Electrostatic tip-sample interaction in immersion force microscopy of semiconductors
    • Donolato C.Electrostatic tip-sample interaction in immersion force microscopy of semiconductors Phys Rev B 54 1996 1478-1481
    • (1996) Phys Rev B , vol.54 , pp. 1478-1481
    • Donolato, C.1
  • 31
    • 36449000613 scopus 로고
    • Atomic ordering of GaInP studied by Kelvin probe force microscopy
    • Leng Y.Williams C.C.Su L.C.Stringfellow G.B.Atomic ordering of GaInP studied by Kelvin probe force microscopy Appl Phys Lett 66 1995 1264-1266
    • (1995) Appl Phys Lett , vol.66 , pp. 1264-1266
    • Leng, Y.1    Williams, C.C.2    Su, L.C.3    Stringfellow, G.B.4
  • 32
    • 5544224805 scopus 로고    scopus 로고
    • Kelvin probe force microscopy for characterization of semiconductor devices and processes
    • Tanimoto M.Vatel O.Kelvin probe force microscopy for characterization of semiconductor devices and processes J Vac Sci Technol B14 1996 1547-1551
    • (1996) J Vac Sci Technol , vol.14 B , pp. 1547-1551
    • Tanimoto, M.1    Vatel, O.2
  • 33
    • 0009333287 scopus 로고    scopus 로고
    • Imaging integrated circuit dopant profiles with the force-based scanning Kelvin probe microscope
    • Hochwitz T.Henning A.K.Levey C.Daghlian C.Slinkman J. et al.Imaging integrated circuit dopant profiles with the force-based scanning Kelvin probe microscope J Vac Sci Technol B14 1996 440-446
    • (1996) J Vac Sci Technol , vol.14 B , pp. 440-446
    • Hochwitz, T.1    Henning, A.K.2    Levey, C.3    Daghlian, C.4    Slinkman, J.5
  • 34
    • 6744222833 scopus 로고    scopus 로고
    • Kelvin probe force microscopy of molecular surfaces
    • Fujihira M.Kelvin probe force microscopy of molecular surfaces Annu Rev Mater Sci 12 1999 353-380
    • (1999) Annu Rev Mater Sci , vol.12 , pp. 353-380
    • Fujihira, M.1
  • 37
    • 0001039850 scopus 로고    scopus 로고
    • Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy
    • Bridger P.M.Bandic Z.Z.Piquette E.C.McGill T.C.Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy Appl Phys Lett 74 1999 3522-3524
    • (1999) Appl Phys Lett , vol.74 , pp. 3522-3524
    • Bridger, P.M.1    Bandic, Z.Z.2    Piquette, E.C.3    McGill, T.C.4
  • 38
    • 0000472116 scopus 로고    scopus 로고
    • Electrostatic force microscopy studies of surface defects on GaAs/Ge films
    • Xu Q.Hsu J.W.P.Electrostatic force microscopy studies of surface defects on GaAs/Ge films J Appl Phys 85 1999 2465-2472
    • (1999) J Appl Phys , vol.85 , pp. 2465-2472
    • Xu, Q.1    Hsu, J.W.P.2
  • 39
    • 0029410456 scopus 로고
    • Nanometer-scale imaging of potential profiles in optically excited n-i-p-i heterostructure using Kelvin probe force microscopy
    • Chavez-Pirson A.Vatel O.Tanimoto M.Ando H.Iwamura H.Kanbe H.Nanometer-scale imaging of potential profiles in optically excited n-i-p-i heterostructure using Kelvin probe force microscopy Appl Phys Lett 67 1995 3069-3071
    • (1995) Appl Phys Lett , vol.67 , pp. 3069-3071
    • Chavez-Pirson, A.1    Vatel, O.2    Tanimoto, M.3    Ando, H.4    Iwamura, H.5    Kanbe, H.6
  • 40
    • 0000027781 scopus 로고    scopus 로고
    • Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy
    • Meoded T.Shikler R.Fried N.Rosenwaks Y.Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy Appl Phys Lett 75 1999 2435-2437
    • (1999) Appl Phys Lett , vol.75 , pp. 2435-2437
    • Meoded, T.1    Shikler, R.2    Fried, N.3    Rosenwaks, Y.4
  • 41
    • 0033345130 scopus 로고    scopus 로고
    • 3 (100) surface by variable temperature scanning surface potential microscopy
    • 3 (100) surface by variable temperature scanning surface potential microscopy Z Metallkd 90 1999 983-989
    • (1999) Z Metallkd , vol.90 , pp. 983-989
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 42
    • 0033314738 scopus 로고    scopus 로고
    • Kelvin probe force microscopy on surfaces: Investigation of the surface potential of self-assembled monolayers on gold
    • This paper is a very important work on quantifying the relationship between surface potential contrast and the properties of organic molecules
    • Lü J., Delamarche E., Eng L., Bennewitz R., Meyer E., Güntherodt H.-J., Kelvin probe force microscopy on surfaces: investigation of the surface potential of self-assembled monolayers on gold. Langmuir 1999;15:8184-8. This paper is a very important work on quantifying the relationship between surface potential contrast and the properties of organic molecules.
    • (1999) Langmuir , vol.15 , pp. 8184-8188
    • Lü, J.1    Delamarche, E.2    Eng, L.3    Bennewitz, R.4    Meyer, E.5    Güntherodt, H.-J.6
  • 44
    • 0001647698 scopus 로고    scopus 로고
    • Scanning impedance microscopy of electroactive interfaces
    • In this work, a new technique, SIM, has been developed and tested on a bicrystal grain-boundary. The significance of SIM lies in its capability to quantify the local resistance and capacitance of an electroactive structure in combination with SSPM
    • Kalinin SV, Bonnell DA. Scanning impedance microscopy of electroactive interfaces. Appl Phys Lett 2001;78:1306-8. In this work, a new technique, SIM, has been developed and tested on a bicrystal grain-boundary. The significance of SIM lies in its capability to quantify the local resistance and capacitance of an electroactive structure in combination with SSPM.
    • (2001) Appl Phys Lett , vol.78 , pp. 1306-1308
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 45
    • 0141914913 scopus 로고    scopus 로고
    • Nonlinear dielectric properties at oxide grain boundaries
    • Kalinin S.V.Bonnell D.A.Nonlinear dielectric properties at oxide grain boundaries Z Metallkd 94 2003 188-192
    • (2003) Z Metallkd , vol.94 , pp. 188-192
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 46
    • 0346665844 scopus 로고    scopus 로고
    • Tip-gating effect in scanning impedance microscopy of nanoelectronic devices
    • In this work, the study of a CNT by combined SIM and SGM has revealed the band structure in the vicinity of resistive defects. The spatial resolution of SIM on a current carrying CNT is proven to be much better than other electrostatic SPMs
    • Kalinin SV, Bonnell DA, Freitag M, Johnson AT. Tip-gating effect in scanning impedance microscopy of nanoelectronic devices. Appl Phys Lett 2002;81:5219-21. In this work, the study of a CNT by combined SIM and SGM has revealed the band structure in the vicinity of resistive defects. The spatial resolution of SIM on a current carrying CNT is proven to be much better than other electrostatic SPMs.
    • (2002) Appl Phys Lett , vol.81 , pp. 5219-5221
    • Kalinin, S.V.1    Bonnell, D.A.2    Freitag, M.3    Johnson, A.T.4
  • 47
    • 0037464195 scopus 로고    scopus 로고
    • Local impedance imaging and spectroscopy of polycrystalline ZnO using contact atomic force microscopy
    • Shao R.Kalinin S.V.Bonnell D.A.Local impedance imaging and spectroscopy of polycrystalline ZnO using contact atomic force microscopy Appl Phys Lett 82 2003 1869-1871
    • (2003) Appl Phys Lett , vol.82 , pp. 1869-1871
    • Shao, R.1    Kalinin, S.V.2    Bonnell, D.A.3
  • 49
    • 5444249586 scopus 로고    scopus 로고
    • Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes
    • A very important work in studying the transport mechanisms of CNT. Furthermore, authors have demonstrated that SSPM and SGM are suitable tools for investigating the quality of a nano circuit
    • Bachtold A, Fuhrer MS, Plyasunov S, Forero M, Anderson EH, Zettl A, McEuen PL. Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes. Phys Rev Lett 2000;84: 6082-5. A very important work in studying the transport mechanisms of CNT. Furthermore, authors have demonstrated that SSPM and SGM are suitable tools for investigating the quality of a nano circuit.
    • (2000) Phys Rev Lett , vol.84 , pp. 6082-6085
    • Bachtold, A.1    Fuhrer, M.S.2    Plyasunov, S.3    Forero, M.4    Anderson, E.H.5    Zettl, A.6    McEuen, P.L.7
  • 50
    • 0034690256 scopus 로고    scopus 로고
    • Molecular transistors - potential modulations along carbon nanotubes
    • The significance of this discovery using SGM lies both in locally controlling the transport through a SWNT device and in the consideration of probe invasiveness of SPM techniques
    • Tans SJ, Dekker C. Molecular transistors - potential modulations along carbon nanotubes. Nature 2000;404:834-5. The significance of this discovery using SGM lies both in locally controlling the transport through a SWNT device and in the consideration of probe invasiveness of SPM techniques.
    • (2000) Nature , vol.404 , pp. 834-835
    • Tans, S.J.1    Dekker, C.2
  • 51
    • 16644402950 scopus 로고    scopus 로고
    • Local electronic properties of single-wall nanotube circuits measured by conducting-tip AFM
    • A much higher resolution on SWNT bundle has been achieved by detecting the tunneling current instead of force interactions. Freitag et al have shown the first evidence of weak coupling between SWNTs predicted by the theory
    • Frietag M, Radosavljevic M, Clauss W, Johnson AT. Local electronic properties of single-wall nanotube circuits measured by conducting-tip AFM. Phys Rev B. 2000;62:R2307-10. A much higher resolution on SWNT bundle has been achieved by detecting the tunneling current instead of force interactions. Freitag et al have shown the first evidence of weak coupling between SWNTs predicted by the theory.
    • (2000) Phys Rev B. , vol.62 R , pp. 2307-2310
    • Frietag, M.1    Radosavljevic, M.2    Clauss, W.3    Johnson, A.T.4
  • 52
    • 0033979339 scopus 로고    scopus 로고
    • Investigations into local ferroelectric properties by atomic force microscopy
    • Durkan C.Welland M.E.Investigations into local ferroelectric properties by atomic force microscopy Ultramicroscopy 82 2000 141-148
    • (2000) Ultramicroscopy , vol.82 , pp. 141-148
    • Durkan, C.1    Welland, M.E.2
  • 53
    • 0029307752 scopus 로고
    • Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy
    • Pioneering paper in PFM showing the reverse piezoelectric effect can be used to image ferroelectric domains with nanoscale resolution. The manipulation of domains with a biased AFM tip is also demonstrated
    • Gruverman A, Kolosov O, Hatano J, Takahashi K, Tokumoto H. Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy. J Vac Sci Technol 1995;B 13:1095-9. Pioneering paper in PFM showing the reverse piezoelectric effect can be used to image ferroelectric domains with nanoscale resolution. The manipulation of domains with a biased AFM tip is also demonstrated.
    • (1995) J Vac Sci Technol , vol.13 B , pp. 1095-1099
    • Gruverman, A.1    Kolosov, O.2    Hatano, J.3    Takahashi, K.4    Tokumoto, H.5
  • 54
    • 0037085895 scopus 로고    scopus 로고
    • Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces
    • Kalinin S.V.Bonnell D.A.Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces Phys Rev B 65 2002 1254081-12540811
    • (2002) Phys Rev B , vol.65 , pp. 1254081-12540811
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 55
    • 0033545055 scopus 로고    scopus 로고
    • Nanoscale reconstruction of surface crystallography from three-dimensional polarization distribution in ferroelectric barium-titanate ceramics
    • Eng L.M.Guntherodt H.J.Schneider G.A.Kopke U.Munoz Saldana J.Nanoscale reconstruction of surface crystallography from three-dimensional polarization distribution in ferroelectric barium-titanate ceramics Appl Phys Lett 74 1999 233-235
    • (1999) Appl Phys Lett , vol.74 , pp. 233-235
    • Eng, L.M.1    Guntherodt, H.J.2    Schneider, G.A.3    Kopke, U.4    Munoz Saldana, J.5
  • 56
    • 0000321010 scopus 로고    scopus 로고
    • Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy
    • Roelofs A.Boettger U.Waser R.Schlaphof F.Trogisch S.Eng L.M.Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy Appl Phys Lett 77 2000 3444-3446
    • (2000) Appl Phys Lett , vol.77 , pp. 3444-3446
    • Roelofs, A.1    Boettger, U.2    Waser, R.3    Schlaphof, F.4    Trogisch, S.5    Eng, L.M.6
  • 57
    • 0010253923 scopus 로고    scopus 로고
    • Piezoresponse scanning force microscopy: What quantitative information can we really get out the piezoresponse measurements on ferroelectric thin films
    • Rigorous interpretation of PFM data requires the understanding of the contribution from polarization nonperpendicular to the surface. In this work, methods to correlate PFM amplitude and ferroelectric polarization are proposed by taking into account the anisotropic nature of piezoelectric coefficients
    • Harnagea C, Pignolet A, Alexe M, Hesse D. Piezoresponse scanning force microscopy:what quantitative information can we really get out the piezoresponse measurements on ferroelectric thin films. Integr Ferroelectr 2001;38:23-9. Rigorous interpretation of PFM data requires the understanding of the contribution from polarization nonperpendicular to the surface. In this work, methods to correlate PFM amplitude and ferroelectric polarization are proposed by taking into account the anisotropic nature of piezoelectric coefficients.
    • (2001) Integr Ferroelectr , vol.38 , pp. 23-29
    • Harnagea, C.1    Pignolet, A.2    Alexe, M.3    Hesse, D.4
  • 59
    • 0000116746 scopus 로고    scopus 로고
    • Quantitative microwave near-field microscopy of dielectric properties
    • Gao C.Xiang X.D.Quantitative microwave near-field microscopy of dielectric properties Rev Sci Instrum 69 1998 3846-3851
    • (1998) Rev Sci Instrum , vol.69 , pp. 3846-3851
    • Gao, C.1    Xiang, X.D.2
  • 60
    • 0000236698 scopus 로고    scopus 로고
    • Scanning nonlinear dielectric microscope
    • Cho Y.Kirihara A.Saeki T.Scanning nonlinear dielectric microscope Rev Sci Instrum 67 1996 2297-2303
    • (1996) Rev Sci Instrum , vol.67 , pp. 2297-2303
    • Cho, Y.1    Kirihara, A.2    Saeki, T.3
  • 62
    • 0001222552 scopus 로고    scopus 로고
    • Surface resistance imaging with a scanning near-field microwave microscope
    • Pioneering work in scanning near-field microwave microscopy
    • Steinhauer DE, Vlahacos CP, Dutta SK, Wellstood FC, Anlage SM. Surface resistance imaging with a scanning near-field microwave microscope. Appl Phys Lett 1997;71:1736-8. Pioneering work in scanning near-field microwave microscopy.
    • (1997) Appl Phys Lett , vol.71 , pp. 1736-1738
    • Steinhauer, D.E.1    Vlahacos, C.P.2    Dutta, S.K.3    Wellstood, F.C.4    Anlage, S.M.5
  • 64
    • 0031912473 scopus 로고    scopus 로고
    • Atomic structure and electronic properties of single-walled carbon nanotubes
    • Odom T.W.Huang J.Kim P.Lieber C.Atomic structure and electronic properties of single-walled carbon nanotubes Nature 391 1998 62
    • (1998) Nature , vol.391 , pp. 62
    • Odom, T.W.1    Huang, J.2    Kim, P.3    Lieber, C.4
  • 66
    • 0000607492 scopus 로고    scopus 로고
    • Deposition and atomic force microscopy of individual phthalocyanine polymers between nanofabricated electrodes
    • Tans S.J.Geerligs L.J.Dekker C.Wu J.Wegner G.Deposition and atomic force microscopy of individual phthalocyanine polymers between nanofabricated electrodes J Vac Sci Technol B15 1997 586-589
    • (1997) J Vac Sci Technol , vol.15 B , pp. 586-589
    • Tans, S.J.1    Geerligs, L.J.2    Dekker, C.3    Wu, J.4    Wegner, G.5
  • 67
    • 0034628434 scopus 로고    scopus 로고
    • Direct measurement of electrical transport through DNA molecules
    • Porath D.Bezryadin A.de Vries S.Dekker C.Direct measurement of electrical transport through DNA molecules Nature 403 2000 635-638
    • (2000) Nature , vol.403 , pp. 635-638
    • Porath, D.1    Bezryadin, A.2    de Vries, S.3    Dekker, C.4
  • 68
    • 0035803316 scopus 로고    scopus 로고
    • Insulating behavior for DNA molecules between nanoelectrodes at the 100 nm length scale
    • Storm A.J.van Noort J.de Vries S.Dekker C.Insulating behavior for DNA molecules between nanoelectrodes at the 100 nm length scale Appl Phys Lett 79 2001 3881-3883
    • (2001) Appl Phys Lett , vol.79 , pp. 3881-3883
    • Storm, A.J.1    van Noort, J.2    de Vries, S.3    Dekker, C.4
  • 69
    • 79956000382 scopus 로고    scopus 로고
    • Controlling doping and carrier injection in carbon nanotube transistors
    • Derycke V.Martel R.Appenzeller J.Avouris P.Controlling doping and carrier injection in carbon nanotube transistors Appl Phys Lett 80 2002 2773-2775
    • (2002) Appl Phys Lett , vol.80 , pp. 2773-2775
    • Derycke, V.1    Martel, R.2    Appenzeller, J.3    Avouris, P.4
  • 70
    • 0000680281 scopus 로고    scopus 로고
    • Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors
    • Radosavljevic M.Freitag M.Thadani K.V.Johnson A.T.Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors Nano Lett 2 2002 761-764
    • (2002) Nano Lett , vol.2 , pp. 761-764
    • Radosavljevic, M.1    Freitag, M.2    Thadani, K.V.3    Johnson, A.T.4
  • 72
    • 21544477058 scopus 로고
    • Surface and domain structures of ferroelectric-crystals studied with scanning force microscopy
    • Luthi R.Haefke H.Meyer K.P.Meyer E.Howald L.Guntherodt H.J. Surface and domain structures of ferroelectric-crystals studied with scanning force microscopy J Appl Phys 74 1993 7461-7471
    • (1993) J Appl Phys , vol.74 , pp. 7461-7471
    • Luthi, R.1    Haefke, H.2    Meyer, K.P.3    Meyer, E.4    Howald, L.5    Guntherodt, H.J.6
  • 74
    • 0003608424 scopus 로고
    • Imaging of ferroelectric domain-walls by force microscopy
    • Saurenbach F.Terris B.D.Imaging of ferroelectric domain-walls by force microscopy Appl Phys Lett 56 1990 1703-1705
    • (1990) Appl Phys Lett , vol.56 , pp. 1703-1705
    • Saurenbach, F.1    Terris, B.D.2
  • 75
    • 0030145804 scopus 로고    scopus 로고
    • Determination of sign of surface charges of ferroelectric TGS using electrostatic force microscope combined with the voltage modulation technique
    • Ohgami J.Sugawara Y.Morita S.Nakamura E.Ozaki T.Determination of sign of surface charges of ferroelectric TGS using electrostatic force microscope combined with the voltage modulation technique Jpn J Appl Phys A35 1996 2734-2739
    • (1996) Jpn J Appl Phys , vol.35 A , pp. 2734-2739
    • Ohgami, J.1    Sugawara, Y.2    Morita, S.3    Nakamura, E.4    Ozaki, T.5
  • 76
    • 0030648013 scopus 로고    scopus 로고
    • Ferroelectric domains and domain boundaries observed by scanning force microscopy
    • Eng L.M.Fousek J.Gunter P.Ferroelectric domains and domain boundaries observed by scanning force microscopy Ferroelectrics 191 1997 211
    • (1997) Ferroelectrics , vol.191 , pp. 211
    • Eng, L.M.1    Fousek, J.2    Gunter, P.3
  • 77
    • 0001287909 scopus 로고    scopus 로고
    • In situ observation of the ferroelectric-paraelectric phase transition in a triglycine sulfate single crystal by variable-temperature electrostatic force microscopy
    • Luo E.Z.Xie Z.Xu J.B.Wilson I.H.Zhao L.H.In situ observation of the ferroelectric-paraelectric phase transition in a triglycine sulfate single crystal by variable-temperature electrostatic force microscopy Phys Rev B 61 2000 203-206
    • (2000) Phys Rev B , vol.61 , pp. 203-206
    • Luo, E.Z.1    Xie, Z.2    Xu, J.B.3    Wilson, I.H.4    Zhao, L.H.5
  • 78
    • 0000598015 scopus 로고    scopus 로고
    • Measurement of hardness, surface potential, and charge distribution with dynamic contact mode electrostatic force microscope
    • Hong J.W.Park S.I.Kim Z.G.Measurement of hardness, surface potential, and charge distribution with dynamic contact mode electrostatic force microscope Rev Sci Instrum 70 1999 1735-1739
    • (1999) Rev Sci Instrum , vol.70 , pp. 1735-1739
    • Hong, J.W.1    Park, S.I.2    Kim, Z.G.3
  • 79
    • 0001226453 scopus 로고    scopus 로고
    • Nondestructive imaging and characterization of ferroelectric domains in periodically poled crystals
    • Eng L.M.Güntherodt H.J.Rosenman G.Skliar A.Oron M.Katz M.Eger D.Nondestructive imaging and characterization of ferroelectric domains in periodically poled crystals J Appl Phys 83 1998 5973-5977
    • (1998) J Appl Phys , vol.83 , pp. 5973-5977
    • Eng, L.M.1    Güntherodt, H.J.2    Rosenman, G.3    Skliar, A.4    Oron, M.5    Katz, M.6    Eger, D.7
  • 80
    • 0001226453 scopus 로고    scopus 로고
    • Nondestructive imaging and characterization of ferroelectric domains in periodically poled crystals
    • Eng L.M.Güntherodt H.J.Rosenman G.Skliar A.Oron M.Katz M.Eger D.Nondestructive imaging and characterization of ferroelectric domains in periodically poled crystals J Appl Phys 83 1998 5973-5977
    • (1998) J Appl Phys , vol.83 , pp. 5973-5977
    • Eng, L.M.1    Güntherodt, H.J.2    Rosenman, G.3    Skliar, A.4    Oron, M.5    Katz, M.6    Eger, D.7
  • 81
    • 0000116001 scopus 로고    scopus 로고
    • Dynamical studies of the ferroelectric domain structure in triglycine sulfate by voltage-modulated scanning force microscopy
    • Likodimos V.Orlik X.K.Pardi L.Labardi M.Allegrini M.Dynamical studies of the ferroelectric domain structure in triglycine sulfate by voltage-modulated scanning force microscopy J Appl Phys 87 2000 443-451
    • (2000) J Appl Phys , vol.87 , pp. 443-451
    • Likodimos, V.1    Orlik, X.K.2    Pardi, L.3    Labardi, M.4    Allegrini, M.5
  • 91
    • 0001114798 scopus 로고    scopus 로고
    • 3 (100) surface by variable temperature scanning surface potential microscopy
    • 3 (100) surface by variable temperature scanning surface potential microscopy J Appl Phys 87 2000 3950-3957
    • (2000) J Appl Phys , vol.87 , pp. 3950-3957
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 92
    • 0001317120 scopus 로고    scopus 로고
    • Kinetics of ferroelectric domains investigated by scanning force microscopy
    • Likodimos V.Labardi M.Allegrini M.Kinetics of ferroelectric domains investigated by scanning force microscopy Phys Rev B 61 2000 14440-14447
    • (2000) Phys Rev B , vol.61 , pp. 14440-14447
    • Likodimos, V.1    Labardi, M.2    Allegrini, M.3
  • 93
    • 0001262001 scopus 로고    scopus 로고
    • 3(100) surface by scanning probe microscopy
    • 3(100) surface by scanning probe microscopy Appl Phys Lett 78 2001 1116-1118
    • (2001) Appl Phys Lett , vol.78 , pp. 1116-1118
    • Kalinin, S.V.1    Bonnell, D.A.2
  • 95
    • 0032621923 scopus 로고    scopus 로고
    • Switching properties of self-assembled ferroelectric memory cells
    • A demonstration of observing switching process via electromechanical hysteresis loops by PFM
    • Alexe M, Gruverman A, Harnagea C, Zakharov ND, Pignolet A, Hesse D, Scott JF. Switching properties of self-assembled ferroelectric memory cells. Appl Phys Lett 1999;75:1158-60. A demonstration of observing switching process via electromechanical hysteresis loops by PFM.
    • (1999) Appl Phys Lett , vol.75 , pp. 1158-1160
    • Alexe, M.1    Gruverman, A.2    Harnagea, C.3    Zakharov, N.D.4    Pignolet, A.5    Hesse, D.6    Scott, J.F.7
  • 96
    • 0034227699 scopus 로고    scopus 로고
    • Measurement of Internal Stresses via the Polarization in Epitaxial Ferroelectric Films
    • This paper is an example of relating piezoresponse to the internal stress of a thin film material. However, one should keep in mind that PFM is reduced to pure electromechanical coupling problem only under certain conditions
    • Roytburd AL, Alpay SP, Nagarajan V, Ganpule CS, Aggarwal S, Williams ED, Ramesh R. Measurement of Internal Stresses via the Polarization in Epitaxial Ferroelectric Films.Phys Rev Lett 2000;85:190-3. This paper is an example of relating piezoresponse to the internal stress of a thin film material. However, one should keep in mind that PFM is reduced to pure electromechanical coupling problem only under certain conditions.
    • (2000) Phys Rev Lett , vol.85 , pp. 190-193
    • Roytburd, A.L.1    Alpay, S.P.2    Nagarajan, V.3    Ganpule, C.S.4    Aggarwal, S.5    Williams, E.D.6    Ramesh, R.7
  • 98
    • 0032613316 scopus 로고    scopus 로고
    • Patterning and switching of nanosize ferroelectric memory
    • Alexe M.Harnagea C.Hesse D.Gosele U.Patterning and switching of nanosize ferroelectric memory cells Appl Phys Lett 75 1999 1793-1795
    • (1999) Appl Phys Lett , vol.75 , pp. 1793-1795
    • Alexe, M.1    Harnagea, C.2    Hesse, D.3    Gosele, U.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.